AON4407 12V P-Channel MOSFET General Description Features The AON4407 uses advanced trench technology to V (V) = -12V DS provide excellent R , low gate charge and operation DS(ON) I = -9 A (V = -4.5V) D GS with gate voltages as low as 1.8V. This device is suitable R < 20m (V = -4.5V) DS(ON) GS for use as a load switch. R < 25m (V = -2.5V) DS(ON) GS R < 31m (V = -1.8V) DS(ON) GS ESD Protected DFN 3x2 D Top View Bottom View Pin 1 D D Rg D D G D D G S S Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol Maximum Units Drain-Source Voltage V -12 V DS Gate-Source Voltage V 8 V GS T =25C -9 A Continuous Drain T =70C I Current -7 A A D C Pulsed Drain Current I -60 DM T =25C 2.5 A B P W Power Dissipation D T =70C 1.6 A Junction and Storage Temperature Range T , T -55 to 150 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A Maximum Junction-to-Ambient t 10s 42 50 C/W R A D JA Maximum Junction-to-Ambient Steady State 74 90 C/W Maximum Junction-to-Lead Steady State R 25 30 C/W JL Alpha & Omega Semiconductor, Ltd. www.aosmd.comAON4407 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =-250A, V =0V -12 V DSS D GS V =-12V, V =0V -1 DS GS I Zero Gate Voltage Drain Current A DSS T =55C -5 J V =0V, V =8V I Gate-Body leakage current 10 A DS GS GSS V =V I =-250A V Gate Threshold Voltage -0.35 -0.5 -0.85 V DS GS D GS(th) I On state drain current V =-4.5V, V =-5V -60 A D(ON) GS DS V =-4.5V, I =-9A 16.5 20 GS D m T =125C 22 26 J R Static Drain-Source On-Resistance V =-2.5V, I =-8.5A 20 25 m DS(ON) GS D V =-1.8V, I =-7.5A 24 31 m GS D V =-1.5V, I =-7A 29 38 m GS D V =-5V, I =-9A g Forward Transconductance 45 S DS D FS I =-1A,V =0V V Diode Forward Voltage -0.53 -1 V S GS SD I Maximum Body-Diode Continuous Current -2.5 A S DYNAMIC PARAMETERS C Input Capacitance 1740 2100 pF iss C Output Capacitance V =0V, V =-6V, f=1MHz 334 pF GS DS oss C Reverse Transfer Capacitance 200 pF rss V =0V, V =0V, f=1MHz R Gate resistance 1.3 1.7 k g GS DS SWITCHING PARAMETERS Q Total Gate Charge 19 23 nC g V =-4.5V, V =-6V, I =-9A Q Gate Source Charge 4.5 nC GS DS D gs Q Gate Drain Charge 5.3 nC gd t Turn-On DelayTime 240 ns D(on) t Turn-On Rise Time V =-4.5V, V =-6V, R =0.67, 580 ns r GS DS L R =3 t Turn-Off DelayTime 7 s GEN D(off) t Turn-Off Fall Time 4.2 s f t I =-9A, dI/dt=100A/s 22 27 rr Body Diode Reverse Recovery Time F ns Q I =-9A, dI/dt=100A/s 17 nC rr Body Diode Reverse Recovery Charge F 2 A. The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25C. The value JA A in any given application depends on the user s specific board design. B. The power dissipation P is based on T =150C, using 10s junction-to-ambient thermal resistance. D J(MAX) C. Repetitive rating, pulse width limited by junction temperature T =150C. Ratings are based on low frequency and duty cycles to keep initial J(MAX) T =25C. J D. The R is the sum of the thermal impedence from junction to lead R and lead to ambient. JA JL E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. 2 F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in FR-4 board with 2oz. Copper, assuming a maximum junction temperature of T =150C. The SOA curve provides a single pulse rating. J(MAX) Rev 1: June 2009 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com