AON4421 P-Channel Enhancement Mode Field Effect Transistor General Description Product Summary V -30V The AON4421 uses advanced trench technology to DS provide excellent R with low gate charge. This DS(ON) I (at V =-10V) -8A D GS device is suitable for use as a load switch. R (at V =-10V) < 26m DS(ON) GS R (at V =-4.5V) < 34m DS(ON) GS ESD Protected -RoHS Compliant -Halogen Free D DFN 3x2 Top View Bottom View Pin 1 D D 1 8 D D 2 7 G 3 6 D D 4 5 S G S Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol Maximum Units Drain-Source Voltage V -30 V DS Gate-Source Voltage V 20 V GS T =25C -8 A Continuous Drain I D T =70C Current -6 A A C Pulsed Drain Current I -60 DM T =25C 2.5 A P W D B Power Dissipation T =70C 1.6 A Junction and Storage Temperature Range T , T -55 to 150 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A t 10s Maximum Junction-to-Ambient 42 50 C/W R A D JA Maximum Junction-to-Ambient Steady-State 74 90 C/W Maximum Junction-to-Lead Steady-State R 25 30 C/W JL Rev.1.0: Sepetember 2014 www.aosmd.com Page 1 of 5 AON4421 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =-250A, V =0V -30 V D GS DSS V =-30V, V =0V -1 DS GS I Zero Gate Voltage Drain Current A DSS T =55C -5 J V =0V, V = 20V I Gate-Body leakage current 10 A GSS DS GS V Gate Threshold Voltage V =V I =-250A -0.8 -1.3 -1.8 V GS(th) DS GS D I On state drain current V =-10V, V =-5V -60 A GS DS D(ON) V =-10V, I =-8A 21 26 GS D m R Static Drain-Source On-Resistance T =125C 28 34 DS(ON) J V =-4.5V, I =-7A 27 34 m GS D g Forward Transconductance V =-5V, I =-8A 22 S FS DS D V Diode Forward Voltage I =-1A,V =0V -0.74 -1 V S GS SD I Maximum Body-Diode Continuous Current -3 A S DYNAMIC PARAMETERS C Input Capacitance 930 1120 pF iss V =0V, V =-15V, f=1MHz C Output Capacitance 170 pF oss GS DS C Reverse Transfer Capacitance 120 pF rss R Gate resistance V =0V, V =0V, f=1MHz 8 g GS DS SWITCHING PARAMETERS Q (-10V) Total Gate Charge 17.6 21 nC g Q (-4.5V) Total Gate Charge 8.6 10 nC g V =-10V, V =-15V, I =-8A GS DS D Q Gate Source Charge 2 nC gs Q Gate Drain Charge 3.4 nC gd t Turn-On DelayTime 6 ns D(on) tt TTuurrnn--OOnn RRiissee TTiimmee VV ==--1100VV,, VV ==--1155VV,, RR ==11..99,, 77 nnss r GS DS L R =3 t Turn-Off DelayTime 40 ns GEN D(off) t Turn-Off Fall Time 30 ns f t I =-8A, dI/dt=500A/s 18 22 rr Body Diode Reverse Recovery Time F ns Q I =-8A, dI/dt=500A/s 32 nC rr Body Diode Reverse Recovery Charge F 2 A. The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. The JA A value in any given application depends on the user s specific board design. B. The power dissipation P is based on T =150 C, using 10s junction-to-ambient thermal resistance. D J(MAX) C. Repetitive rating, pulse width limited by junction temperature T =150 C. Ratings are based on low frequency and duty cycles to keep J(MAX) initialT =25 C. J D. The R is the sum of the thermal impedence from junction to lead R and lead to ambient. JA JL E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. 2 F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in FR-4 board with 2oz. Copper, assuming a maximum junction temperature of T =150 C. The SOA curve provides a single pulse rating. J(MAX) COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: Sepetember 2014 www.aosmd.com Page 2 of 5