AON6246 60V N-Channel MOSFET General Description Product Summary V 60V The AON6246 uses trench MOSFET technology that is DS uniquely optimized to provide the most efficient high I (at V =10V) 80A D GS frequency switching performance.Power losses are R (at V =10V) < 6.4m DS(ON) GS minimized due to an extremely low combination of R DS(ON) R (at V = 4.5V) < 8m DS(ON) GS and C .In addition,switching behavior is well controlled rss with a soft recovery body diode.This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. 100% UIS Tested 100% R Tested g D DFN5X6 Top View Top View Bottom View 1 8 2 7 3 6 4 5 G S PIN1 Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol Maximum Units DDrraaiinn--SSoouurrccee VVoollttaaggee VV 6600 VV DS Gate-Source Voltage V 20 V GS T =25C 80 C Continuous Drain I D Current T =100C 51 A C C Pulsed Drain Current I 170 DM T =25C 13 A Continuous Drain I A DSM T =70C Current 10 A C Avalanche Current I , I 50 A AS AR C Avalanche energy L=0.1mH E , E 125 mJ AS AR T =25C 83 C P W D B T =100C Power Dissipation 33 C T =25C 2.3 A P W DSM A Power Dissipation T =70C 1.4 A Junction and Storage Temperature Range T , T -55 to 150 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A Maximum Junction-to-Ambient t 10s 14 17 C/W R A D JA Maximum Junction-to-Ambient Steady-State 40 55 C/W Maximum Junction-to-Case Steady-State R 1.1 1.5 C/W JC Rev 0: July 2011 www.aosmd.com Page 1 of 6 AON6246 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =250A, V =0V 60 V D GS DSS V =60V, V =0V 1 DS GS I Zero Gate Voltage Drain Current A DSS T =55C 5 J V =0V, V =20V I Gate-Body leakage current 100 nA GSS DS GS V V =V , I =250A Gate Threshold Voltage 1.5 2 2.5 V GS(th) DS GS D I On state drain current V =10V, V =5V 170 A GS DS D(ON) V =10V, I =20A 5.3 6.4 GS D m R Static Drain-Source On-Resistance T =125C 9.3 11.2 DS(ON) J V =4.5V, I =20A 6.3 8 m GS D V =5V, I =20A g Forward Transconductance 100 S FS DS D V Diode Forward Voltage I =1A,V =0V 0.7 1 V S GS SD G I Maximum Body-Diode Continuous Current 85 A S DYNAMIC PARAMETERS C Input Capacitance 2280 2850 3420 pF iss V =0V, V =30V, f=1MHz C Output Capacitance 180 258 335 pF oss GS DS C Reverse Transfer Capacitance 4.5 15.5 26.5 pF rss R Gate resistance V =0V, V =0V, f=1MHz 0.4 0.8 1.2 g GS DS SWITCHING PARAMETERS Q (10V) Total Gate Charge 26 33 40 nC g Q (4.5V) Total Gate Charge 11 14 20 nC g V =10V, V =30V, I =20A GS DS D Q Gate Source Charge 9 nC gs Q Gate Drain Charge 4 nC gd t Turn-On DelayTime 8 ns D(on) tt TTuurrnn--OOnn RRiissee TTiimmee VV ==1100VV,, VV ==3300VV,, RR ==11..55,, 22 nnss r GS DS L R =3 t Turn-Off DelayTime 29 ns GEN D(off) t Turn-Off Fall Time 4 ns f t I =20A, dI/dt=500A/s 13 rr Body Diode Reverse Recovery Time F 19 25 ns Q I =20A, dI/dt=500A/s 50 nC rr Body Diode Reverse Recovery Charge F 72 95 2 A. The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. The JA A Power dissipation P is based on R and the maximum allowed junction temperature of 150 C. The value in any given application depends DSM JA on the user s specific board design. B. The power dissipation P is based on T =150 C, using junction-to-case thermal resistance, and is more useful in setting the upper D J(MAX) dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T =150 C. Ratings are based on low frequency and duty cycles to keep J(MAX) initial T =25 C. J D. The R is the sum of the thermal impedance from junction to case R and case to ambient. JA JC E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T =150 C. The SOA curve provides a single pulse rating. J(MAX) G. The maximum current rating is package limited. 2 H. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. A THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0: July 2011 www.aosmd.com Page 2 of 6