AON6270 75V N-Channel MOSFET General Description Product Summary V 75V The AON6270 uses trench MOSFET technology that is DS uniquely optimized to provide the most efficient high I (at V =10V) 85A D GS frequency switching performance. Both conduction and R (at V =10V) < 3.9m DS(ON) GS switching power losses are minimized due to an R (at V =6V) < 5.0m DS(ON) GS extremely low combination of R , Ciss and Coss. DS(ON) This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. 100% UIS Tested 100% R Tested g D DFN5X6 Top View Top View Bottom View 1 8 2 7 3 6 4 5 G S PIN1 Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol Maximum Units DDrraaiinn--SSoouurrccee VVoollttaaggee VV 7755 VV DS Gate-Source Voltage V 20 V GS T =25C Continuous Drain 85 C I D G Current T =100C 67 A C C Pulsed Drain Current I 200 DM T =25C 31.5 A Continuous Drain I A DSM Current T =70C 25 A C Avalanche Current I 63 A AS C Avalanche energy L=0.1mH E 200 mJ AS T =25C 83 C P W D B Power Dissipation T =100C 33 C T =25C 7.3 A P W DSM A T =70C Power Dissipation 4.7 A Junction and Storage Temperature Range T , T -55 to 150 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A Maximum Junction-to-Ambient t 10s 14 17 C/W R JA A D Steady-State Maximum Junction-to-Ambient 40 55 C/W Maximum Junction-to-Case Steady-State R 1.1 1.5 C/W JC Rev 1: Mar. 2012 www.aosmd.com Page 1 of 6 AON6270 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =250A, V =0V 75 V D GS DSS V =75V, V =0V 1 DS GS I Zero Gate Voltage Drain Current A DSS T =55C 5 J V =0V, V =20V I Gate-Body leakage current 100 nA GSS DS GS V V =V I =250A Gate Threshold Voltage 2 2.65 3.2 V GS(th) DS GS D I On state drain current V =10V, V =5V 200 A GS DS D(ON) V =10V, I =20A 3.3 3.9 GS D m R Static Drain-Source On-Resistance T =125C 5.5 6.6 DS(ON) J V =6V, I =20A 4.0 5.0 m GS D V =5V, I =20A g Forward Transconductance 77 S FS DS D V Diode Forward Voltage I =1A,V =0V 0.7 1 V S GS SD G I Maximum Body-Diode Continuous Current 85 A S DYNAMIC PARAMETERS C Input Capacitance 4100 pF iss V =0V, V =37.5V, f=1MHz C Output Capacitance 615 pF oss GS DS C Reverse Transfer Capacitance 58 pF rss R Gate resistance V =0V, V =0V, f=1MHz 0.7 g GS DS SWITCHING PARAMETERS Q Total Gate Charge 60 85 nC g V =10V, V =37.5V, I =20A Q Gate Source Charge 15 nC gs GS DS D Q Gate Drain Charge 14 nC gd t Turn-On DelayTime 14 ns D(on) t Turn-On Rise Time V =10V, V =37.5V, R =1.9, 9 ns r GS DS L RR ==33 tt TTuurrnn--OOffff DDeellaayyTTiimmee 3344 nnss D(off) GEN t Turn-Off Fall Time 9 ns f t I =20A, dI/dt=500A/s rr Body Diode Reverse Recovery Time F 32 ns Q I =20A, dI/dt=500A/s nC rr Body Diode Reverse Recovery Charge F 170 2 A. The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. The JA A Power dissipation P is based on R and the maximum allowed junction temperature of 150 C. The value in any given application depends DSM JA on the user s specific board design. B. The power dissipation P is based on T =150 C, using junction-to-case thermal resistance, and is more useful in setting the upper D J(MAX) dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T =150 C. Ratings are based on low frequency and duty cycles to keep J(MAX) initial T =25 C. J D. The R is the sum of the thermal impedence from junction to case R and case to ambient. JA JC E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T =150 C. The SOA curve provides a single pulse rating. J(MAX) G. The maximum current rating is package limited. 2 H. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. A THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 1 : Mar. 2012 www.aosmd.com Page 2 of 6