AON6370 30V N-Channel MOSFET General Description Product Summary V Trench Power MOS Technology DS 30V Low R I (at V =10V) 47A DS(ON) D GS Low Gate Charge R (at V =10V) < 7.2m DS(ON) GS High Current Capability R (at V =4.5V) < 11.5m DS(ON) GS RoHS and Halogen-Free Compliant 100% UIS Tested Applications 100% Rg Tested DC/DC Converters in Computing Isolated DC/DC Converters in Telecom and Industrial See Note I DFN5X6 D Top View Top View Bottom View 1 8 2 7 3 6 4 5 G PIN1 S PIN1 Orderable Part Number Package Type Form Minimum Order Quantity AON6370 DFN 5x6 Tape & Reel 3000 Absolute Maximum Ratings T =25C unless otherwise noted A PPaarraamemetteerr SSyymbmbooll MMaaxxiimumumm UUnniittss Drain-Source Voltage V 30 V DS Gate-Source Voltage V 20 V GS T =25C 47 C Continuous Drain I D T =100C Current 29 A C C Pulsed Drain Current I 90 DM T =25C 23 A Continuous Drain I A DSM Current T =70C 18 A C Avalanche Current I 40 A AS C Avalanche energy L=0.01mH E 8 mJ AS V Spike 10s V 36 V DS SPIKE T =25C 26 C P W D B Power Dissipation T =100C 10 C T =25C 6.2 A P W DSM A T =70C Power Dissipation 4 A Junction and Storage Temperature Range T , T -55 to 150 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A Maximum Junction-to-Ambient t 10s 15 20 C/W R A D JA Maximum Junction-to-Ambient Steady-State 40 50 C/W Maximum Junction-to-Case Steady-State R 3.8 4.8 C/W JC Rev.2.0: September 2017 www.aosmd.com Page 1 of 6 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage ID=250A, VGS=0V 30 V DSS V =30V, V =0V 1 DS GS I Zero Gate Voltage Drain Current A DSS T =55C 5 J V =0V, V =20V I Gate-Body leakage current 100 nA GSS DS GS V Gate Threshold Voltage V =V I =250A 1.4 1.8 2.2 V GS(th) DS GS, D V =10V, I =20A 5.8 7.2 GS D m R Static Drain-Source On-Resistance T =125C 8.7 10.5 DS(ON) J V =4.5V, I =20A 9 11.5 m GS D V =5V, I =20A g Forward Transconductance 62 S FS DS D V Diode Forward Voltage I =1A,V =0V 0.71 1 V S GS SD I Maximum Body-Diode Continuous Current 30 A S DYNAMIC PARAMETERS C Input Capacitance 840 pF iss V =0V, V =15V, f=1MHz C Output Capacitance GS DS 330 pF oss C Reverse Transfer Capacitance 50 pF rss R Gate resistance f=1MHz 0.6 1.2 1.8 g SWITCHING PARAMETERS Q (10V) Total Gate Charge 13 nC g Q (4.5V) Total Gate Charge 6.2 nC g V =10V, V =15V, I =20A GS DS D Q Gate Source Charge 2.5 nC gs Q Gate Drain Charge 3.5 nC gd Q Gate Source Charge 2.5 nC gs V =4.5V, V =15V, I =20A GS DS D Q Gate Drain Charge 3.5 nC gd t Turn-On DelayTime 5.5 ns D(on) tt TTuurrnn--OOnn RRiissee TTiimmee VV ==1100VV,, VV ==1155VV,, RR ==00..7755,, 33 nnss rr GGSS DDSS LL R =3 t Turn-Off DelayTime 17 ns D(off) GEN t Turn-Off Fall Time 3 ns f t I =20A, dI/dt=500A/s rr Body Diode Reverse Recovery Time F 11 ns Q I =20A, dI/dt=500A/s nC rr Body Diode Reverse Recovery Charge F 18 2 A. The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. The Power JA A dissipation P is based on R t 10s and the maximum allowed junction temperature of 150 C. The value in any given application depends on DSM JA the user s specific board design. B. The power dissipation P is based on T =150 C, using junction-to-case thermal resistance, and is more useful in setting the upper D J(MAX) dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature T =150 C. J(MAX) D. The R is the sum of the thermal impedance from junction to case R and case to ambient. JA JC E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T =150 C. The SOA curve provides a single pulse rating. J(MAX) G. The maximum current rating is package limited. 2 H. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. A I. For application requiring slow >1ms turn-on/turn-off, please consult AOS FAE for proper product selection. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.2.0: September 2017 www.aosmd.com Page 2 of 6