AON6403 30V P-Channel MOSFET General Description Product Summary V -30V The AON6403 combines advanced trench MOSFET DS technology with a low resistance package to provide I (at V = -10V) -85A D GS extremely low R . This device is ideal for load switch DS(ON) R (at V = -10V) < 3.1m DS(ON) GS and battery protection applications. R (at V = -4.5V) < 4.3m DS(ON) GS 100% UIS Tested 100% R Tested g DFN5X6 D Top View Top View Bottom View 1 8 2 7 3 6 4 G 5 PIN1 S Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol Maximum Units Drain-Source Voltage V -30 V DS Gate-Source Voltage V 20 V GS T =25C Continuous Drain -85 C I D G Current T =100C -67 A C C Pulsed Drain Current I -280 DM T =25C -21 A Continuous Drain I A DSM T =70C Current -17 A C Avalanche Current I -72 A AR C Repetitive avalanche energy L=0.1mH E 259 mJ AR T =25C 83 C P W D B Power Dissipation T =100C 33 C T =25C 2.3 A P W DSM A Power Dissipation T =70C 1.4 A Junction and Storage Temperature Range T , T -55 to 150 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A t 10s Maximum Junction-to-Ambient 14 17 C/W R JA A D Maximum Junction-to-Ambient Steady-State 40 55 C/W Maximum Junction-to-Case Steady-State R 1 1.5 C/W JC Rev 2: November 2010 www.aosmd.com Page 1 of 6AON6403 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =-250A, V =0V -30 V DSS D GS V =-30V, V =0V -1 DS GS I Zero Gate Voltage Drain Current A DSS T =55C -5 J I Gate-Body leakage current V =0V, V = 20V 100 nA DS GS GSS V Gate Threshold Voltage V =V I =-250A -1.2 -1.7 -2.2 V GS(th) DS GS D I On state drain current V =-10V, V =-5V -280 A D(ON) GS DS V =-10V, I =-20A 2.6 3.1 GS D m R Static Drain-Source On-Resistance T =125C 3.6 4.4 DS(ON) J V =-4.5V, I =-20A 3.5 4.3 m GS D g Forward Transconductance V =-5V, I =-20A 82 S DS D FS V Diode Forward Voltage I =-1A,V =0V -0.7 -1 V SD S GS I Maximum Body-Diode Continuous Current -85 A S DYNAMIC PARAMETERS C Input Capacitance 6100 7600 9120 pF iss C Output Capacitance V =0V, V =-15V, f=1MHz 930 1320 1720 pF oss GS DS C Reverse Transfer Capacitance 630 1050 1470 pF rss R Gate resistance V =0V, V =0V, f=1MHz 1 2 4 g GS DS SWITCHING PARAMETERS Q (10V) Total Gate Charge 130 163 196 nC g Q (4.5V) Total Gate Charge 63 79 95 nC g V =-10V, V =-15V, I =-20A GS DS D Q Gate Source Charge 18 22 26 nC gs Q Gate Drain Charge 20 33 46 nC gd t Turn-On DelayTime 13 ns D(on) t Turn-On Rise Time V =-10V, V =-15V, 18 ns r GS DS t Turn-Off DelayTime R =0.75, R =3 135 ns L GEN D(off) t Turn-Off Fall Time 52 ns f t I =-20A, dI/dt=500A/s 21 26 rr Body Diode Reverse Recovery Time F 32 ns Q I =-20A, dI/dt=500A/s 63 78 94 nC rr Body Diode Reverse Recovery Charge F 2 A. The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25C. The JA A Power dissipation P is based on R and the maximum allowed junction temperature of 150C. The value in any given application depends DSM JA on the user s specific board design, and the maximum temperature of 150C may be used if the PCB allow s it. B. The power dissipation P is based on T =150C, using junction-to-case thermal resistance, and is more useful in setting the upper D J(MAX) dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T =150C. Ratings are based on low frequency and duty cycles to keep J(MAX) initial T =25C.Maximum UIS current limited by test equipment . J D. The R is the sum of the thermal impedence from junction to case R and case to ambient. JA JC E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T =150C. The SOA curve provides a single pulse ratin g. J(MAX) G. The maximum current rating is limited by package. 2 H. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T =25C. A Rev 2: Nov. 2010 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 2: November 2010 www.aosmd.com Page 2 of 6