AON6404A 30V N-Channel MOSFET General Description Product Summary V 30V The AON6404A combines advanced trench MOSFET DS technology with a low resistance package to provide I (at V =10V) 85A D GS extremely low R . This device is ideal for load switch DS(ON) R (at V =10V) < 2.3m DS(ON) GS and battery protection applications. R (at V =4.5V) < 3.0m DS(ON) GS ESD protected 100% UIS Tested 100% R Tested g D DFN5X6 Top View Top View Bottom View 1 8 2 7 G 3 6 4 5 S PIN1 Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Maximum Symbol Units Drain-Source Voltage V 30 V DS GGaattee--SSoouurrccee VVoollttaaggee VV 2200 VV GGSS T =25C 85 Continuous Drain C I D G Current T =100C 67 A C C Pulsed Drain Current I 280 DM T =25C 25 A Continuous Drain I A DSM Current T =70C 19 A C Avalanche Current I , I 60 A AS AR C Avalanche energy L=0.1mH E , E 180 mJ AS AR T =25C 83 C P W D B Power Dissipation T =100C 33 C T =25C 2.3 A P W DSM A Power Dissipation T =70C 1.4 A Junction and Storage Temperature Range T , T -55 to 150 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A Maximum Junction-to-Ambient t 10s 14 17 C/W R JA A D Steady-State Maximum Junction-to-Ambient 40 55 C/W Maximum Junction-to-Case Steady-State R 0.85 1.5 C/W JC www.aosmd.com Rev 1.0: November 2013 Page 1 of 6 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =250A, V =0V 30 36 V D GS DSS V =30V, V =0V 1 DS GS I Zero Gate Voltage Drain Current DSS A T =55C 5 J I Gate-Body leakage current V =0V, V = 16V 10 uA GSS DS GS V Gate Threshold Voltage V =V I =250A 1.3 1.85 2.4 V GS(th) DS GS D I On state drain current V =10V, V =5V 280 A D(ON) GS DS V =10V, I =20A 1.9 2.3 GS D m R Static Drain-Source On-Resistance T =125C 2.8 3.4 DS(ON) J V =4.5V, I =20A 2.4 3 m GS D g Forward Transconductance V =5V, I =20A 130 S FS DS D I =1A,V =0V V Diode Forward Voltage 0.67 1 V SD S GS G I Maximum Body-Diode Continuous Current 85 A S DYNAMIC PARAMETERS C Input Capacitance 3450 4335 5210 pF iss V =0V, V =15V, f=1MHz C Output Capacitance GS DS 500 720 950 pF oss C Reverse Transfer Capacitance 260 435 610 pF rss R Gate resistance V =0V, V =0V, f=1MHz 1 2 3 GS DS g SWITCHING PARAMETERS Q (10V) Total Gate Charge 55 71 86 nC g Q (4.5V) Total Gate Charge 25 33 40 nC g V =10V, V =15V, I =20A GS DS D Q Gate Source Charge 10 nC gs Q Gate Drain Charge 16 nC gd t Turn-On DelayTime 10 ns D(on) t Turn-On Rise Time V =10V, V =15V, R =0.75, 6.5 ns r GS DS L R =3 t Turn-Off DelayTime 75.5 ns D(off) GEN tt TTuurrnn--OOffff FFaallll TTiimmee 1177..55 nnss f t I =20A, dI/dt=500A/s rr Body Diode Reverse Recovery Time F 29 35 ns Q I =20A, dI/dt=500A/s nC rr Body Diode Reverse Recovery Charge F 13.5 2 A. The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25C. The JA A Power dissipation P is based on R and the maximum allowed junction temperature of 150C. The value in any given application depends DSM JA on the user s specific board design, and the maximum temperature of 150C may be used if the PCB allows it. B. The power dissipation P is based on T =150C, using junction-to-case thermal resistance, and is more useful in setting the upper D J(MAX) dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T =150C. Ratings are based on low frequency and duty cycles to keep initial J(MAX) T =25C. J D. The R is the sum of the thermal impedence from junction to case R and case to ambient. JA JC E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T =150C. The SOA curve provides a single pulse rating. J(MAX) G. The maximum current rating is package limited. 2 H. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T =25C. A THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 1.0: November 2013 www.aosmd.com Page 2 of 6