AON6435 30V P-Channel MOSFET General Description Product Summary V -30V The AON6435 combines advanced trench MOSFET DS technology with a low resistance package to provide I (at V = -10V) -34A D GS extremely low R . This device is ideal for load switch DS(ON) R (at V = -10V) < 17m DS(ON) GS and battery protection applications. R (at V =-5V) < 34m DS(ON) GS 100% UIS Tested 100% R Tested g D DFN5X6 Top View Top View Bottom View 1 8 2 7 3 6 4 5 G S PIN1 Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol Maximum Units DDrraaiinn--SSoouurrccee VVoollttaaggee VV --3300 VV DDSS Gate-Source Voltage V 25 V GS T =25C -34 C Continuous Drain I D Current T =100C -21.5 A C C Pulsed Drain Current I -95 DM T =25C -12 A Continuous Drain I A DSM Current T =70C -10 A C Avalanche Current I 24 A AS C Avalanche energy L=0.1mH E 29 mJ AS T =25C 31 C P W D B Power Dissipation T =100C 12.5 C T =25C 4.1 A P W DSM A T =70C Power Dissipation 2.6 A Junction and Storage Temperature Range T , T -55 to 150 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A t 10s Maximum Junction-to-Ambient 24 30 C/W R JA A D Steady-State Maximum Junction-to-Ambient 53 64 C/W Maximum Junction-to-Case Steady-State R 3.4 4 C/W JC Rev 0: Sep 2011 www.aosmd.com Page 1 of 7 AON6435 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =-250A, V =0V -30 V D GS DSS V =-30V, V =0V -1 DS GS I Zero Gate Voltage Drain Current A DSS T =55C -5 J V =0V, V =25V I Gate-Body leakage current 100 nA GSS DS GS V V =V I =-250A Gate Threshold Voltage -1.7 -2.3 -3 V GS(th) DS GS, D I On state drain current V =-10V, V =-5V -95 A GS DS D(ON) V =-10V, I =-20A 13 17 GS D m R Static Drain-Source On-Resistance T =125C 25 DS(ON) 19 J V =-5V, I =-15A 25 34 m GS D V =-5V, I =-20A g Forward Transconductance 28 S FS DS D V Diode Forward Voltage I =-1A,V =0V -0.73 -1 V S GS SD I Maximum Body-Diode Continuous Current -35 A S DYNAMIC PARAMETERS C Input Capacitance 1130 1400 pF iss C Output Capacitance V =0V, V =-15V, f=1MHz 240 pF oss GS DS C Reverse Transfer Capacitance 155 pF rss R Gate resistance V =0V, V =0V, f=1MHz 5.8 8 g GS DS SWITCHING PARAMETERS Q (10V) Total Gate Charge 21 nC g Q (4.5V) Total Gate Charge 10 nC g V =-10V, V =-15V, I =-20A GS DS D Q Gate Source Charge 4 nC gs Q Gate Drain Charge 6 nC gd t Turn-On DelayTime 10 ns D(on) tt TTuurrnn--OOnn RRiissee TTiimmee VV ==--1100VV,, VV ==--1155VV,, 88 nnss r GS DS t Turn-Off DelayTime R =0.75, R =3 15 ns L GEN D(off) t Turn-Off Fall Time 7 ns f t I =-20A, dI/dt=500A/s 13.5 rr Body Diode Reverse Recovery Time F ns Q I =-20A, dI/dt=500A/s 29 nC rr Body Diode Reverse Recovery Charge F 2 A. The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. The JA A Power dissipation P is based on R and the maximum allowed junction temperature of 150 C. The value in any given application depends DSM JA on the user s specific board design, and the maximum temperature of 150 C may be used if the PCB allows it. B. The power dissipation P is based on T =150 C, using junction-to-case thermal resistance, and is more useful in setting the upper D J(MAX) dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T =150 C. Ratings are based on low frequency and duty cycles to keep J(MAX) initial T =25 C.Maximum UIS current limited by test equipment. J D. The R is the sum of the thermal impedance from junction to case R and case to ambient. JA JC E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T =150 C. The SOA curve provides a single pulse rating. J(MAX) G. The maximum current rating is package limited. 2 H. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. A THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0: Sep 2011 www.aosmd.com Page 2 of 7