AON6978 30V Dual Asymmetric N-Channel AlphaMOS General Description Product Summary Q1 Q2 Latest Trench Power AlphaMOS (MOS LV) technology Integrated Schottky Diode (SRFET) on Low-Side V 30V 30V DS Very Low R at 4.5V V DS(on) GS I (at V =10V) 28A 36A D GS Low Gate Charge R (at V =10V) <5.7m <3.8m DS(ON) GS High Current Capability R (at V =4.5V) <9.4m <4.9m DS(ON) GS RoHS and Halogen-Free Compliant Application 100% UIS Tested 100% Rg Tested DC/DC Converters in Computing, Servers, and POL Isolated DC/DC Converters in Telecom and Industrial Top View Bottom View DFN5X6B Top View Bottom View TM PIN1 Q2: SRFET PIN1 Soft Recovery MOSFET: Integrated Schottky Diode Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol Max Q1 Max Q2 Units Drain-Source Voltage V 30 V DS Gate-Source Voltage V 20 12 V GGSS T =25C 28 36 Continuous Drain C I D G Current T =100C 22 28 A C C Pulsed Drain Current I 112 144 DM T =25C 20 28 A Continuous Drain I A DSM Current T =70C 16 22 A C Avalanche Current I 40 60 A AS C Avalanche Energy L=0.01mH E 8 18 mJ AS V Spike 100ns V 36 36 V DS SPIKE T =25C 31 33 C P W D B Power Dissipation T =100C 12 13 C T =25C 3.6 4.3 A P W DSM A T =70C Power Dissipation 2.3 2.7 A Junction and Storage Temperature Range T , T -55 to 150 C J STG Thermal Characteristics Parameter Symbol Typ Q1 Typ Q2 Max Q1 Max Q2 Units A t 10s 29 24 35 29 Maximum Junction-to-Ambient C/W R JA A D Steady-State Maximum Junction-to-Ambient 56 50 67 60 C/W Maximum Junction-to-Case Steady-State R C/W 3.3 3 4 3.8 JC Rev.1.0: June 2013 www.aosmd.com Page 1 of 10 AON6978 Q1 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =250A, V =0V 30 V D GS DSS V =30V, V =0V 1 DS GS I Zero Gate Voltage Drain Current A DSS T =55C 5 J V =0V, V =20V I Gate-Body leakage current 100 nA GSS DS GS V V =V I =250A Gate Threshold Voltage 1.4 1.8 2.2 V GS(th) DS GS D V =10V, I =20A 4.7 5.7 GS D m R Static Drain-Source On-Resistance T =125C 6.3 7.6 DS(ON) J V =4.5V, I =20A 7.5 9.4 m GS D V =5V, I =20A g Forward Transconductance 62 S FS DS D I =1A,V =0V V Diode Forward Voltage 0.7 1 V SD S GS G I Maximum Body-Diode Continuous Current 28 A S DYNAMIC PARAMETERS C Input Capacitance 1010 pF iss V =0V, V =15V, f=1MHz C Output Capacitance 474 pF oss GS DS C Reverse Transfer Capacitance 50 pF rss R Gate resistance V =0V, V =0V, f=1MHz 0.7 1.6 2.4 GS DS g SWITCHING PARAMETERS Q (10V) Total Gate Charge 14.4 25 nC g Q (4.5V) Total Gate Charge 6.8 15 nC g V =10V, V =15V, I =20A GS DS D Q Gate Source Charge 2.9 nC gs Q Gate Drain Charge 2.5 nC gd t Turn-On DelayTime 4.8 ns D(on) t Turn-On Rise Time V =10V, V =15V, R =0.75, 3.2 ns r GS DS L RR ==33 tt TTuurrnn--OOffff DDeellaayyTTiimmee 2211 nnss D(off) GEN t Turn-Off Fall Time 3.8 ns f t I =20A, dI/dt=500A/s rr Body Diode Reverse Recovery Time F 14 ns Q I =20A, dI/dt=500A/s nC rr Body Diode Reverse Recovery Charge F 24 2 A. The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. The JA A Power dissipation P is based on R t 10s and the maximum allowed junction temperature of 150 C. The value in any given application DSM JA depends on the user s specific board design. B. The power dissipation P is based on T =150 C, using junction-to-case thermal resistance, and is more useful in setting the upper D J(MAX) dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T =150 C. Ratings are based on low frequency and duty cycles to keep J(MAX) initial T =25 C. J D. The R is the sum of the thermal impedence from junction to case R and case to ambient. JA JC E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T =150 C. The SOA curve provides a single pulse rating. J(MAX) G. The maximum current rating is limited by package. 2 H. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25 C. COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: June 2013 www.aosmd.com Page 2 of 10