AON7246 60V N-Channel MOSFET General Description Product Summary V The AON7246 combines advanced trench MOSFET 60V DS technology with a low resistance package to provide I (at V =10V) 34.5A D GS extremely low R .This device is ideal for boost DS(ON) R (at V =10V) < 15m DS(ON) GS converters and synchronous rectifiers for consumer, R (at V =4.5V) < 19m DS(ON) GS telecom, industrial power supplies and LED backlighting. 100% UIS Tested 100% R Tested g DFN 3x3 EP D Top View Bottom View Top View 1 8 2 7 3 6 G 4 5 S Pin 1 Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Maximum Units Symbol Drain-Source Voltage V 60 V DS GGaattee--SSoouurrccee VVoollttaaggee VV 2200 VV GS T =25C 34.5 C Continuous Drain I D T =100C Current 22 A C C Pulsed Drain Current I 95 DM T =25C 10 A Continuous Drain I A DSM T =70C Current 8 A C Avalanche Current I , I 20 A AS AR C Avalanche energy L=0.1mH E , E 20 mJ AS AR T =25C 34.7 C P W D B Power Dissipation T =100C 13.9 C T =25C 3.1 A P W DSM A T =70C Power Dissipation 2 A Junction and Storage Temperature Range T , T -55 to 150 C J STG Thermal Characteristics Parameter Typ Max Units Symbol A t 10s Maximum Junction-to-Ambient 30 40 C/W R JA A D Steady-State Maximum Junction-to-Ambient 60 75 C/W Maximum Junction-to-Case Steady-State R 3 3.6 C/W JC Rev 0: Sep. 2011 www.aosmd.com Page 1 of 6 AON7246 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS I =250A, V =0V BV Drain-Source Breakdown Voltage 60 V DSS D GS V =60V, V =0V 1 DS GS I Zero Gate Voltage Drain Current A DSS T =55C 5 J V =0V, V =20V I Gate-Body leakage current 100 nA GSS DS GS V Gate Threshold Voltage V =V , I =250A 1.5 2 2.5 V GS(th) DS GS D I On state drain current V =10V, V =5V 95 A D(ON) GS DS V =10V, I =10A 12 15 GS D m R Static Drain-Source On-Resistance T =125C 20.5 26 DS(ON) J V =4.5V, I =9A 15 19 m GS D V =5V, I =10A g Forward Transconductance 75 S FS DS D V Diode Forward Voltage I =1A,V =0V 0.72 1 V S GS SD I Maximum Body-Diode Continuous Current 35 A S DYNAMIC PARAMETERS C Input Capacitance 1070 1340 1610 pF iss V =0V, V =30V, f=1MHz C Output Capacitance GS DS 85 123 160 pF oss C Reverse Transfer Capacitance 6 10 14 pF rss R Gate resistance V =0V, V =0V, f=1MHz 0.7 1.5 2.3 g GS DS SWITCHING PARAMETERS Q (10V) Total Gate Charge 16 21 25 nC g Q (4.5V) Total Gate Charge 7 9 11 nC g V =10V, V =30V, I =10A GS DS D Q Gate Source Charge 4.7 nC gs Q Gate Drain Charge 2.6 nC gd t Turn-On DelayTime 6 ns D(on) t Turn-On Rise Time V =10V, V =30V, R =3.0, 2.5 ns r GS DS L t Turn-Off DelayTime R =3 22 ns GEN D(off) tt TTuurrnn--OOffff FFaallll TTiimmee 22..55 nnss f t I =10A, dI/dt=500A/s 10.5 rr Body Diode Reverse Recovery Time F 15.5 20.5 ns Q I =10A, dI/dt=500A/s 38.5 nC rr Body Diode Reverse Recovery Charge F 55.5 72.5 2 A. The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25C. The Power JA A dissipation P is based on R t 10s value and the maximum allowed junction temperature of 150C. The value in any given application DSM JA depends on the user s specific board design. B. The power dissipation P is based on T =150C, using junction-to-case thermal resistance, and is more useful in setting the upper D J(MAX) dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T =150C. Ratings are based on low frequency and duty cycles to keep initial J(MAX) T =25C. J D. The R is the sum of the thermal impedance from junction to case R and case to ambient. JA JC E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T =150C. The SOA curve provides a single pulse rating. J(MAX) G. The maximum current rating is package limited. 2 H. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T =25C. A THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0: Sep. 2011 www.aosmd.com Page 2 of 6