AON7404 20V N-Channel MOSFET General Description Product Summary V The AON7404 combines advanced trench MOSFET 20V DS technology with a low resistance package to provide I (at V =4.5V) 20A D GS extremely low R . This device is ideal for load switch DS(ON) R (at V =4.5V) < 6m DS(ON) GS and battery protection applications. R (at V =2.5V) < 7.5m DS(ON) GS 100% UIS Tested 100% R Tested g DFN 3x3 EP D Top View Bottom View Top View 1 8 2 7 3 6 4 G 5 Pin 1 S Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol Maximum Units Drain-Source Voltage V 20 V DS Gate-Source Voltage V 12 V GS T =25C Continuous Drain 40 C I D G Current T =100C 31 A C C Pulsed Drain Current I 160 DM T =25C 20 A Continuous Drain I A DSM T =70C Current 16 A C Avalanche Current I , I 57 A AS AR C Avalanche energy L=0.1mH E , E 162 mJ AS AR T =25C 40 C P W D B Power Dissipation T =100C 16 C T =25C 3.1 A P W DSM A Power Dissipation T =70C 2 A Junction and Storage Temperature Range T , T -55 to 150 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A t 10s Maximum Junction-to-Ambient 30 40 C/W R JA A D Maximum Junction-to-Ambient Steady-State 60 75 C/W Maximum Junction-to-Case Steady-State R 2.6 3.1 C/W JC Rev 2: Mar. 2011 www.aosmd.com Page 1 of 6 AON7404 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =250A, V =0V 20 V DSS D GS V =20V, V =0V 1 DS GS I Zero Gate Voltage Drain Current A DSS T =55C 5 J I Gate-Body leakage current V =0V, V = 12V 100 nA DS GS GSS V Gate Threshold Voltage V =V I =250A 0.5 1 1.6 V GS(th) DS GS D I On state drain current V =10V, V =5V 160 A D(ON) GS DS V =4.5V, I =20A 4.9 6 GS D m R Static Drain-Source On-Resistance T =125C 6.2 7.4 DS(ON) J V =2.5V, I =18A 5.8 7.5 m GS D g Forward Transconductance V =5V, I =20A 105 S DS D FS V Diode Forward Voltage I =1A,V =0V 0.6 1 V SD S GS G I Maximum Body-Diode Continuous Current 40 A S DYNAMIC PARAMETERS C Input Capacitance 3080 3860 4630 pF iss V =0V, V =10V, f=1MHz C Output Capacitance 520 740 960 pF GS DS oss C Reverse Transfer Capacitance 350 580 810 pF rss R Gate resistance V =0V, V =0V, f=1MHz 0.6 1.4 2.1 g GS DS SWITCHING PARAMETERS Q (4.5V) Total Gate Charge 28 36 43 nC g V =10V, V =10V, I =20A Q Gate Source Charge 7 9 11 nC GS DS D gs Q Gate Drain Charge 7 12 17 nC gd t Turn-On DelayTime 7 ns D(on) t Turn-On Rise Time V =10V, V =10V, R =0.56, 8 ns r GS DS L R =3 t Turn-Off DelayTime 70 ns GEN D(off) t Turn-Off Fall Time 18 ns f t I =20A, dI/dt=500A/s 13 rr Body Diode Reverse Recovery Time F 17 20 ns Q I =20A, dI/dt=500A/s 29 nC rr Body Diode Reverse Recovery Charge F 36 43 2 A. The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25C. The JA A Power dissipation P is based on R t 10s value and the maximum allowed junction temperature of 150C. The value in any given DSM JA application depends on the user s specific board design. B. The power dissipation P is based on T =150C, using junction-to-case thermal resistance, and is more useful in setting the upper D J(MAX) dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T =150C. Ratings are based on low frequency and duty cycles to keep J(MAX) initial T =25C.Maximum avalanche current limited by tester capability. J D. The R is the sum of the thermal impedence from junction to case R and case to ambient. JA JC E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T =150C. The SOA curve provides a single pulse ratin g. J(MAX) G. The maximum current rating is package limited. 2 H. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T =25C. A THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 2: Mar. 2011 www.aosmd.com Page 2 of 6