AON7416 30V N-Channel MOSFET General Description Product Summary V 30V The AON7416 uses advanced trench technology to DS provide excellent R , low gate charge.This device is I (at V =10V) 40A DS(ON) D GS suitable for use as a high side switch in SMPS and R (at V =10V) < 8.5m DS(ON) GS general purpose applications. R (at V = 4.5V) < 10m DS(ON) GS 100% UIS Tested 100% R Tested g DDFFNN 33xx33 EEPP DD TToopp VViieeww BBoottttoomm VViieeww TToopp VViieeww 11 88 22 77 33 66 44 55 GG PPiinn 11 SS Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol Maximum Units DDrraaiinn--SSoouurrccee VVoollttaaggee VV 3300 VV DDSS Gate-Source Voltage V 12 V GS T =25C 40 C Continuous Drain I D Current T =100C 26 A C C Pulsed Drain Current I 118 DM T =25C 14 A Continuous Drain I A DSM Current T =70C 11 A C Avalanche Current I , I 36 A AS AR C Avalanche energy L=0.05mH E , E 32 mJ AS AR T =25C 25 C P W D B Power Dissipation T =100C 10 C T =25C 3.1 A P W DSM A T =70C Power Dissipation 2 A Junction and Storage Temperature Range T , T -55 to 150 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A t 10s Maximum Junction-to-Ambient 30 40 C/W R JA A D Steady-State Maximum Junction-to-Ambient 60 75 C/W Maximum Junction-to-Case Steady-State R 4.2 5 C/W JC Rev0 : Mar 2011 www.aosmd.com Page 1 of 6 AON7416 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =250A, V =0V 30 V D GS DSS V =30V, V =0V 1 DS GS I Zero Gate Voltage Drain Current A DSS T =55C 5 J V =0V, V = 12V I Gate-Body leakage current 100 nA GSS DS GS V V =V I =250A Gate Threshold Voltage 0.8 1.2 1.7 V GS(th) DS GS D I On state drain current V =10V, V =5V 118 A GS DS D(ON) V =10V, I =20A 6.8 8.5 GS D m R Static Drain-Source On-Resistance T =125C 11 13.5 DS(ON) J V =4.5V, I =20A 7.7 10 m GS D V =5V, I =20A g Forward Transconductance 100 S FS DS D V Diode Forward Voltage I =1A,V =0V 0.7 1 V S GS SD I Maximum Body-Diode Continuous Current 30 A S DYNAMIC PARAMETERS C Input Capacitance 1260 1580 1900 pF iss V =0V, V =15V, f=1MHz C Output Capacitance 110 160 210 pF oss GS DS C Reverse Transfer Capacitance 60 100 140 pF rss R Gate resistance V =0V, V =0V, f=1MHz 0.7 1.4 2.1 g GS DS SWITCHING PARAMETERS Q (10V) Total Gate Charge 20 26 32 nC g Q (4.5V) Total Gate Charge 9 12 15 nC g V =10V, V =15V, I =20A GS DS D Q Gate Source Charge 2 3 4 nC gs Q Gate Drain Charge 1.5 3 4.5 nC gd t Turn-On DelayTime 5 ns D(on) tt TTuurrnn--OOnn RRiissee TTiimmee VV ==1100VV,, VV ==1155VV,, RR ==00..7755,, 22 nnss r GS DS L R =3 t Turn-Off DelayTime 29 ns D(off) GEN t Turn-Off Fall Time 3 ns f t I =20A, dI/dt=500A/s 8 rr Body Diode Reverse Recovery Time F 10 12 ns Q I =20A, dI/dt=500A/s 12 nC rr Body Diode Reverse Recovery Charge F 16 20 2 A. The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. The JA A Power dissipation P is based on R and the maximum allowed junction temperature of 150 C. The value in any given application depends DSM JA on the user s specific board design. B. The power dissipation P is based on T =150 C, using junction-to-case thermal resistance, and is more useful in setting the upper D J(MAX) dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T =150 C. Ratings are based on low frequency and duty cycles to keep J(MAX) initial T =25 C. J D. The R is the sum of the thermal impedence from junction to case R and case to ambient. JA JC E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T =150 C. The SOA curve provides a single pulse rating. J(MAX) G. The maximum current rating is package limited. 2 H. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. A THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev0 : Mar 2011 www.aosmd.com Page 2 of 6