AON7508 30V N-Channel AlphaMOS General Description Product Summary V 30V Latest Trench Power AlphaMOS (MOS LV) technology DS Very Low RDS(on) at 4.5V GS I (at V =10V) 32A D GS Low Gate Charge R (at V =10V) < 3.0m DS(ON) GS High Current Capability R (at V =4.5V) < 4.6m DS(ON) GS RoHS and Halogen-Free Compliant Application 100% UIS Tested DC/DC Converters in Computing, Servers, and POL 100% R Tested g Isolated DC/DC Converters in Telecom and Industrial DFN 3x3 EP D Top View Top View Bottom View 1 8 2 7 3 6 4 5 G Pin 1 S Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol Maximum Units DDrraaiinn--SSoouurrccee VVoollttaaggee VV 3300 VV DDSS Gate-Source Voltage V 20 V GS T =25C Continuous Drain 32 C I D G Current T =100C 25 A C C Pulsed Drain Current I 128 DM T =25C 26 A Continuous Drain I A DSM Current T =70C 21 A C Avalanche Current I 50 A AS C Avalanche energy L=0.05mH E 63 mJ AS V Spike 100ns V 36 V DS SPIKE T =25C 62.5 C P W D B Power Dissipation T =100C 25 C T =25C 3.1 A P W DSM A Power Dissipation T =70C 2 A Junction and Storage Temperature Range T , T -55 to 150 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A t 10s Maximum Junction-to-Ambient 30 40 C/W R A D JA Steady-State Maximum Junction-to-Ambient 60 75 C/W Maximum Junction-to-Case Steady-State R 1.5 2 C/W JC Rev 0: Feb. 2012 www.aosmd.com Page 1 of 6 AON7508 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =250A, V =0V 30 V D GS DSS V =30V, V =0V 1 DS GS I Zero Gate Voltage Drain Current A DSS T =55C 5 J V =0V, V =20V I Gate-Body leakage current 100 nA GSS DS GS V Gate Threshold Voltage V =V I =250A 1.2 1.8 2.2 V GS(th) DS GS, D V =10V, I =20A 2.4 3 GS D m R Static Drain-Source On-Resistance T =125C 3.3 4.1 DS(ON) J V =4.5V, I =20A 3.5 4.6 m GS D V =5V, I =20A g Forward Transconductance 85 S FS DS D V Diode Forward Voltage I =1A,V =0V 0.68 1 V SD S GS G I Maximum Body-Diode Continuous Current 32 A S DYNAMIC PARAMETERS C Input Capacitance 1835 pF iss V =0V, V =15V, f=1MHz C Output Capacitance 940 pF oss GS DS C Reverse Transfer Capacitance 90 pF rss R Gate resistance V =0V, V =0V, f=1MHz 0.7 1.5 2.3 GS DS g SWITCHING PARAMETERS Q (10V) Total Gate Charge 29 40 nC g Q (4.5V) Total Gate Charge 13.6 19 nC g V =10V, V =15V, I =20A GS DS D Q Gate Source Charge 5.8 nC gs Q Gate Drain Charge 5.3 nC gd t Turn-On DelayTime 7.9 ns D(on) t Turn-On Rise Time V =10V, V =15V, R =0.75, 4.0 ns r GS DS L RR ==33 tt TTuurrnn--OOffff DDeellaayyTTiimmee 2277..33 nnss D(off) GEN t Turn-Off Fall Time 6.5 ns f t I =20A, dI/dt=500A/s rr Body Diode Reverse Recovery Time F 19 ns Q I =20A, dI/dt=500A/s nC rr Body Diode Reverse Recovery Charge F 36.7 2 A. The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. The JA A Power dissipation P is based on R and the maximum allowed junction temperature of 150 C. The value in any given application depends DSM JA on the user s specific board design. B. The power dissipation P is based on T =150 C, using junction-to-case thermal resistance, and is more useful in setting the upper D J(MAX) dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature T =150 C. J(MAX) D. The R is the sum of the thermal impedance from junction to case R and case to ambient. JA JC E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T =150 C. The SOA curve provides a single pulse rating. J(MAX) G. The maximum current rating is package limited. 2 H. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. A THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0: Feb. 2012 www.aosmd.com Page 2 of 6