AON7522E 30V N-Channel AlphaMOS General Description Product Summary V Latest Trench Power AlphaMOS (MOS LV) technology DS 30V Very Low RDS(on) at 4.5V GS I (at V =10V) 34A D GS Low Gate Charge R (at V =10V) < 4m DS(ON) GS ESD protection R (at V = 4.5V) < 6.8m DS(ON) GS RoHS and Halogen-Free Compliant Typical ESD protection HBM Class 2 Application 100% UIS Tested DC/DC Converters 100% R Tested g D DFN 3x3 EP Top View Top View Bottom View 1 8 S D 2 7 D S 3 6 G S D 4 5 G D S Pin 1 Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol Maximum Units DDrraaiinn--SSoouurrccee VVoollttaaggee VV 3300 VV DDSS Gate-Source Voltage V 20 V GS T =25C Continuous Drain 34 C I D G Current T =100C 27 A C C Pulsed Drain Current I 136 DM T =25C 21 A Continuous Drain I A DSM Current T =70C 17 A C Avalanche Current I 35 A AS C Avalanche energy L=0.05mH E 31 mJ AS V Spike 100ns V 36 V DS SPIKE T =25C 31 C P W D B Power Dissipation T =100C 12 C T =25C 3.1 A P W DSM A Power Dissipation T =70C 2 A Junction and Storage Temperature Range T , T -55 to 150 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A t 10s Maximum Junction-to-Ambient 30 40 C/W R JA A D Steady-State Maximum Junction-to-Ambient 60 75 C/W Maximum Junction-to-Case Steady-State R 3.2 4 C/W JC Rev0: Mar 2012 www.aosmd.com Page 1 of 6 AON7522E Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =250A, V =0V 30 V D GS DSS V =30V, V =0V 1 DS GS I Zero Gate Voltage Drain Current A DSS T =55C 5 J V =0V, V = 20V I Gate-Body leakage current 10 A GSS DS GS V V =V I =250A Gate Threshold Voltage 1.2 1.8 2.2 V GS(th) DS GS, D V =10V, I =20A 3.2 4 GS D m R Static Drain-Source On-Resistance T =125C 5 6.2 DS(ON) J V =4.5V, I =16A 5.3 6.8 m GS D V =5V, I =20A g Forward Transconductance 62 S FS DS D I =1A,V =0V V Diode Forward Voltage 0.7 1 V SD S GS G I Maximum Body-Diode Continuous Current 34 A S DYNAMIC PARAMETERS C Input Capacitance 1540 pF iss V =0V, V =15V, f=1MHz C Output Capacitance 485 pF oss GS DS C Reverse Transfer Capacitance 448 pF rss R Gate resistance V =0V, V =0V, f=1MHz 0.8 1.7 2.6 GS DS g SWITCHING PARAMETERS Q (10V) Total Gate Charge 33.4 45 nC g Q (4.5V) Total Gate Charge 19.7 27 nC g V =10V, V =15V, I =20A GS DS D Q Gate Source Charge 3.3 nC gs Q Gate Drain Charge 15.0 nC gd t Turn-On DelayTime 7 ns D(on) t Turn-On Rise Time V =10V, V =15V, R =0.75, 8.3 ns r GS DS L RR ==33 tt TTuurrnn--OOffff DDeellaayyTTiimmee 2244 nnss D(off) GEN t Turn-Off Fall Time 10 ns f t I =20A, dI/dt=500A/s rr Body Diode Reverse Recovery Time F 15.2 ns Q I =20A, dI/dt=500A/s nC rr Body Diode Reverse Recovery Charge F 22.2 2 A. The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. The JA A Power dissipation P is based on R and the maximum allowed junction temperature of 150 C. The value in any given application depends DSM JA on the user s specific board design. B. The power dissipation P is based on T =150 C, using junction-to-case thermal resistance, and is more useful in setting the upper D J(MAX) dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T =150 C. Ratings are based on low frequency and duty cycles to keep J(MAX) initial T =25 C. J D. The R is the sum of the thermal impedance from junction to case R and case to ambient. JA JC E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T =150 C. The SOA curve provides a single pulse rating. J(MAX) G. The maximum current rating is package limited. 2 H. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. A THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev0: Mar 2012 www.aosmd.com Page 2 of 6
