AON7804 30V Dual N-Channel MOSFET General Description Product Summary V The AON7804 is designed to provide a high efficiency DS 30V 22A synchronous buck power stage with optimal layout and I (at V =10V) D GS board space utilization. It includes two low R DS (ON) < 21m R (at V =10V) DS(ON) GS MOSFETs in a dual DFN3x3 package. The AON7804 is < 26m R (at V = 4.5V) DS(ON) GS well suited for use in compact DC/DC converter applications. 100% UIS Tested 100% R Tested g ESD protected DFN 3x3A Dual Top View Bottom View D D Top View D1 G1 D1 S1 S2 D2 G G G2 D2 Pin 1 Pin 1 S S Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol Maximum Units V Drain-Source Voltage 30 V DS V Gate-Source Voltage 20 V GS T =25C 22 Continuous Drain C I D Current T =100C 14 A C C Pulsed Drain Current I 48 DM T =25C 9 Continuous Drain A I A DSM Current T =70C 7 A C Avalanche Current I , I 19 A AS AR C Avalanche energy L=0.1mH E , E 18 mJ AS AR T =25C 17 C P W B D Power Dissipation T =100C 7 C T =25C 3.1 A P W A DSM Power Dissipation T =70C 2 A Junction and Storage Temperature Range T , T -55 to 150 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A t 10s Maximum Junction-to-Ambient 30 40 C/W R JA A D Steady-State Maximum Junction-to-Ambient 60 75 C/W R Maximum Junction-to-Case Steady-State 6.2 7.5 C/W JC Rev 0: Nov 2010 www.aosmd.com Page 1 of 6 AON7804 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =250A, V =0V 30 V DSS D GS V =30V, V =0V 1 DS GS I Zero Gate Voltage Drain Current A DSS T =55C 5 J A I Gate-Body leakage current V =0V, V = 20V 10 GSS DS GS V Gate Threshold Voltage V =V I =250A 1.2 1.8 2.4 V GS(th) DS GS D I On state drain current V =10V, V =5V 48 A D(ON) GS DS V =10V, I =8A 17 21 GS D m R Static Drain-Source On-Resistance T =125C 23 DS(ON) J m V =4.5V, I =7A 21 26 GS D g Forward Transconductance V =5V, I =9A 30 S FS DS D V Diode Forward Voltage I =1A,V =0V 0.75 1 V SD S GS I Maximum Body-Diode Continuous Current 15 A S DYNAMIC PARAMETERS C Input Capacitance 600 740 888 pF iss V =0V, V =15V, f=1MHz C Output Capacitance 77 110 145 pF oss GS DS C Reverse Transfer Capacitance 50 82 115 pF rss R Gate resistance V =0V, V =0V, f=1MHz 0.5 1.1 1.7 g GS DS SWITCHING PARAMETERS (10V) Q Total Gate Charge 12 15 18 nC g Q (4.5V) Total Gate Charge 6 7.5 9 nC g V =10V, V =15V, I =8A GS DS D Q Gate Source Charge 2.5 nC gs Q Gate Drain Charge 3nC gd t Turn-On DelayTime 5ns D(on) t Turn-On Rise Time V =10V, V =15V, R =1.7, 3.5 ns r GS DS L t R =3 Turn-Off DelayTime GEN 19 ns D(off) t Turn-Off Fall Time 3.5 ns f t I =8A, dI/dt=500A/s 6 rr Body Diode Reverse Recovery Time F 810 ns Q I =8A, dI/dt=500A/s 14 nC rr Body Diode Reverse Recovery Charge F 18 22 2 A. The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25C. The JA A Power dissipation P is based on R t 10s value and the maximum allowed junction temperature of 150C. The value in any given DSM JA application depends on the user s specific board design. B. The power dissipation P is based on T =150C, using junction-to-case thermal resistance, and is more useful in setting the upper D J(MAX) dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T =150C. Ratings are based on low frequency and duty cycles to keep initial J(MAX) T =25C. J D. The R is the sum of the thermal impedence from junction to case R and case to ambient. JA JC E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T =150C. The SOA curve provides a single pulse rating. J(MAX) G. The maximum current rating is package limited. 2 H. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T =25C. A THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0: Nov 2010 www.aosmd.com Page 2 of 6