AOT12N50/AOB12N50/AOTF12N50 500V, 12A N-Channel MOSFET General Description Product Summary V 600V 150 The AOT12N50 & AOB12N50 & AOTF12N50 have been DS fabricated using an advanced high voltage MOSFET I (at V =10V) 12A D GS process that is designed to deliver high levels of R (at V =10V) < 0.52 DS(ON) GS performance and robustness in popular AC-DC applications.By providing low R , C and C along DS(on) iss rss with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. 100% UIS Tested 100% R Tested g For Halogen Free add suffix to part number: AOT12N50L & AOTF12N50L & AOB12N50L Top View TO-263 D TO-220 TO-220F 2 D PAK D G S S S D S G D G G AOT12N50 AOTF12N50 AOB12N50 Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol AOT12N50/AOB12N50 AOTF12N50 Units Drain-Source Voltage V 500 V DS GGaattee--SSoouurrccee VVoollttaaggee VV 3300 VV GGSS T =25C 12 12* C Continuous Drain I D Current T =100C 8.4 8.4* A C C Pulsed Drain Current I 48 DM C Avalanche Current I 5.5 A AR C Repetitive avalanche energy E 454 mJ AR G Single plused avalanche energy E 908 mJ AS MOSFET dv/dt ruggedness 40 dv/dt V/ns Peak diode recovery dv/dt 5 T =25C 250 50 W C P D B o o Power Dissipation Derate above 25 C 2 0.4 W/ C Junction and Storage Temperature Range T , T -55 to 150 C J STG Maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds T 300 C L Thermal Characteristics Parameter Symbol AOT12N50/AOB12N50 AOTF12N50 Units A,D Maximum Junction-to-Ambient R 65 65 C/W JA A R Maximum Case-to-sink CS 0.5 -- C/W Maximum Junction-to-Case R 0.5 2.5 C/W JC * Drain current limited by maximum junction temperature. www.aosmd.com Rev.8.0: April 2014 Page 1 of 6 AOT12N50/AOB12N50/AOTF12N50 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS I =250A, V =0V, T =25C 500 D GS J BV Drain-Source Breakdown Voltage DSS I =250A, V =0V, T =150C 600 V D GS J BV Breakdown Voltage Temperature DSS o I =250A, V =0V D GS 0.54 V/ C Coefficient /TJ V =500V, V =0V 1 DS GS I Zero Gate Voltage Drain Current A DSS V =400V, T =125C 10 DS J I V =0V, V =30V Gate-Body leakage current 100 n GSS DS GS V V =5V I =250A 3.3 3.9 4.5 V Gate Threshold Voltage GS(th) DS D R Static Drain-Source On-Resistance V =10V, I =6A 0.36 0.52 GS D DS(ON) V =40V, I =6A g Forward Transconductance 16 S FS DS D V Diode Forward Voltage I =1A,V =0V 0.72 1 V S GS SD I Maximum Body-Diode Continuous Current 12 A S I Maximum Body-Diode Pulsed Current 48 A SM DYNAMIC PARAMETERS C Input Capacitance 1089 1361 1633 pF iss V =0V, V =25V, f=1MHz C Output Capacitance 134 167 200 pF GS DS oss C Reverse Transfer Capacitance 10 12.6 15 pF rss R Gate resistance V =0V, V =0V, f=1MHz 1.8 3.6 5.4 g GS DS SWITCHING PARAMETERS Q Total Gate Charge 30.7 37 nC g V =10V, V =400V, I =12A Q Gate Source Charge 7.6 9 nC GS DS D gs Q Gate Drain Charge 13.0 16 nC gd t Turn-On DelayTime 29 35 ns D(on) t Turn-On Rise Time V =10V, V =250V, I =12A, 69 83 ns GS DS D r RR ==2255 tt TTuurrnn--OOffff DDeellaayyTTiimmee GG 8822 9988 nnss DD((ooffff)) t Turn-Off Fall Time 55.5 67 ns f t I =12A,dI/dt=100A/s,V =100V 231 rr Body Diode Reverse Recovery Time F DS 277 ns Q I =12A,dI/dt=100A/s,V =100V 2.82 C rr Body Diode Reverse Recovery Charge F DS 3.4 A. The value of R is measured with the device in a still air environment with T =25 C. JA A B. The power dissipation P is based on T =150 C, using junction-to-case thermal resistance, and is more useful in setting the upper D J(MAX) dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T =150 C, Ratings are based on low frequency and duty cycles to keep initial J(MAX) T =25 C. J D. The R is the sum of the thermal impedence from junction to case R and case to ambient. JA JC E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T =150 C. The SOA curve provides a single pulse rating. J(MAX) G. L=60mH, I =5.5A, V =150V, R =25 , Starting T =25 C AS DD G J THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.8.0: April 2014 www.aosmd.com Page 2 of 6