AOT414 100V N-channel MOSFET General Description Product Summary TM V 100V DS The AOT414 is fabricated with SDMOS trench technology that combines excellent R with low gate I (at V =10V) 43A D GS DS(ON) charge.The result is outstanding efficiency with controlled R (at V =10V) < 25m DS(ON) GS switching behavior. This universal technology is well R (at V = 7V) < 31m DS(ON) GS suited for PWM, load switching and general purpose applications.AOT414 and AOT414L are electrically identical. 100% UIS Tested 100% R Tested g TO220 Top View Bottom View D D GG S G D D G S S Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol Maximum Units Drain-Source Voltage V 100 V DS Gate-Source Voltage V 25 V GS T =25C Continuous Drain 43 C I D G Current T =100C 31 A C C Pulsed Drain Current I 100 DM T =25C 5.6 A Continuous Drain I A DSM Current T =70C 4.5 A C Avalanche Current I 28 A AR C Repetitive avalanche energy L=0.1mH E 39 mJ AR T =25C 115 C P W D B Power Dissipation T =100C 58 C T =25C 1.9 A P W DSM A T =70C Power Dissipation 1.23 A Junction and Storage Temperature Range T , T -55 to 175 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A t 10s Maximum Junction-to-Ambient 11.6 13.9 C/W R JA A D Steady-State Maximum Junction-to-Ambient 54 65 C/W Maximum Junction-to-Case Steady-State R 0.7 1.3 C/W JC Rev1: May 2012 www.aosmd.com Page 1 of 7 AOT414 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =250A, V =0V 100 V D GS DSS V =100V, V =0V 10 DS GS I Zero Gate Voltage Drain Current A DSS T =55C 50 J V =0V, V = 25V I Gate-Body leakage current 100 nA GSS DS GS V Gate Threshold Voltage V =V I =250A 2 3.3 4 V GS(th) DS GS D I On state drain current V =10V, V =5V 100 A GS DS D(ON) V =10V, I =20A 20.5 25 GS D m R Static Drain-Source On-Resistance T =125C 36 43 DS(ON) J V =7V, I =15A 25 31 m GS D g Forward Transconductance V =5V, I =20A 37 S FS DS D V Diode Forward Voltage I =1A,V =0V 0.66 1 V S GS SD I Maximum Body-Diode Continuous Current 40 A S DYNAMIC PARAMETERS C Input Capacitance 1400 1770 2200 pF iss V =0V, V =50V, f=1MHz C Output Capacitance 115 165 214 pF oss GS DS C Reverse Transfer Capacitance 33 55 80 pF rss R Gate resistance V =0V, V =0V, f=1MHz 0.3 0.65 1.0 g GS DS SSWWIITTCCHHIINNGG PPAARRAAMMEETTEERRSS Q (10V) Total Gate Charge 14 28 42 nC g V =10V, V =50V, I =20A Q Gate Source Charge 4 9 14 nC gs GS DS D Q Gate Drain Charge 6 10 14 nC gd t Turn-On DelayTime 12 ns D(on) t Turn-On Rise Time V =10V, V =50V, R =2.5, 4 ns r GS DS L R =3 t Turn-Off DelayTime 17 ns D(off) GEN t Turn-Off Fall Time 5 ns f t I =20A, dI/dt=100A/s 20 rr Body Diode Reverse Recovery Time F 29 38 ns Q I =20A, dI/dt=100A/s 25 nC rr Body Diode Reverse Recovery Charge F 36 46 t I =20A, dI/dt=500A/s 12 rr Body Diode Reverse Recovery Time F 20 26 ns Q I =20A, dI/dt=500A/s 60 nC rr Body Diode Reverse Recovery Charge F 82 110 2 A. The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. The JA A Power dissipation P is based on R and the maximum allowed junction temperature of 175 C. The value in any given application depends DSM JA on the user s specific board design, and the maximum temperature of 175 C may be used if the PCB allows it. B. The power dissipation P is based on T =175 C, using junction-to-case thermal resistance, and is more useful in setting the upper D J(MAX) dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T =175 C. Ratings are based on low frequency and duty cycles to keep J(MAX) initial T =25 C. J D. The R is the sum of the thermal impedence from junction to case RqJC and case to ambient. JA E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T =175 C. The SOA curve provides a single pulse rating. J(MAX) 2 G. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T . A=25C COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 1: May 2012 www.aosmd.com Page 2 of 7