AOT10N60/AOB10N60/AOTF10N60 600V,10A N-Channel MOSFET General Description Product Summary V 700V 150 The AOT10N60 & AOB10N60 & AOTF10N60 have been DS fabricated using an advanced high voltage MOSFET I (at V =10V) 10A D GS process that is designed to deliver high levels of R (at V =10V) < 0.75 DS(ON) GS performance and robustness in popular AC-DC applications.By providing low R , C and C along DS(on) iss rss with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. 100% UIS Tested 100% R Tested g For Halogen Free add suffix to part number: AOT10N60L & AOTF10N60L & AOB10N60L Top View TO-263 TO-220 TO-220F 2 D PAK D D G S S D S G D S G G AOT10N60 AOTF10N60 AOB10N60 Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol AOT10N60/AOB10N60 AOTF10N60 Units Drain-Source Voltage V 600 V DS GGaattee--SSoouurrccee VVoollttaaggee VV 3300 VV GGSS T =25C 10 10* C Continuous Drain I D Current T =100C 7.2 7.2* A C C Pulsed Drain Current I 36 DM C Avalanche Current I 4.4 A AR C Repetitive avalanche energy E 290 mJ AR G Single plused avalanche energy E 580 mJ AS MOSFET dv/dt ruggedness 45 dv/dt V/ns Peak diode recovery dv/dt 5 T =25C 250 50 W C P D B o o Power Dissipation Derate above 25 C 2 0.4 W/ C Junction and Storage Temperature Range T , T -55 to 150 C J STG Maximum lead temperature for soldering T 300 C purpose, 1/8 from case for 5 seconds L Thermal Characteristics Parameter Symbol AOT10N60/AOB10N60 AOTF10N60 Units A,D Maximum Junction-to-Ambient R 65 65 C/W JA A Maximum Case-to-sink R CS 0.5 -- C/W Maximum Junction-to-Case R 0.5 2.5 C/W JC * Drain current limited by maximum junction temperature. www.aosmd.com Rev.8.0: March 2014 Page 1 of 6 AOT10N60/AOB10N60/AOTF10N60 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS I =250A, V =0V, T =25C 600 D GS J BV Drain-Source Breakdown Voltage DSS I =250A, V =0V, T =150C 700 V D GS J BV Breakdown Voltage Temperature DSS o I =250A, V =0V D GS V/ C Coefficient 0.65 /TJ V =600V, V =0V 1 DS GS I Zero Gate Voltage Drain Current A DSS V =480V, T =125C 10 DS J I Gate-Body leakage current V =0V, V =30V 100 n GSS DS GS V V =5V I =250A Gate Threshold Voltage 3 4 4.5 V GS(th) DS D R Static Drain-Source On-Resistance V =10V, I =5A 0.6 0.75 GS D DS(ON) V =40V, I =5A g Forward Transconductance 15 S FS DS D V Diode Forward Voltage I =1A,V =0V 0.73 1 V SD S GS I Maximum Body-Diode Continuous Current 10 A S I Maximum Body-Diode Pulsed Current 36 A SM DYNAMIC PARAMETERS C Input Capacitance 1100 1320 1600 pF iss C Output Capacitance V =0V, V =25V, f=1MHz 105 130 160 pF GS DS oss C Reverse Transfer Capacitance 7.5 9.3 11 pF rss V =0V, V =0V, f=1MHz R Gate resistance 3 3.8 6 g GS DS SWITCHING PARAMETERS Q Total Gate Charge 31 40 nC g Q Gate Source Charge V =10V, V =480V, I =10A 6 10 nC GS DS D gs Q Gate Drain Charge 14.4 20 nC gd t Turn-On DelayTime 28 35 ns D(on) t Turn-On Rise Time V =10V, V =300V, I =10A, 66 80 ns GS DS D r R =25 t Turn-Off DelayTime G 76 95 ns DD((ooffff)) t Turn-Off Fall Time 64 80 ns f t I =10A,dI/dt=100A/s,V =100V 290 350 rr Body Diode Reverse Recovery Time F DS ns Q I =10A,dI/dt=100A/s,V =100V 3.9 4.7 C rr Body Diode Reverse Recovery Charge F DS A. The value of R is measured with the device in a still air environment with T =25 C. JA A B. The power dissipation P is based on T =150 C, using junction-to-case thermal resistance, and is more useful in setting the upper D J(MAX) dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T =150 C, Ratings are based on low frequency and duty cycles to keep initial J(MAX) T =25 C. J D. The R is the sum of the thermal impedence from junction to case R and case to ambient. JA JC E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T =150 C. The SOA curve provides a single pulse rating. J(MAX) G. L=60mH, I =4.4A, V =150V, R =25 , Starting T =25 C AS DD G J THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.8.0: March 2014 www.aosmd.com Page 2 of 6