AOT12N60/AOTF12N60 600V,12A N-Channel MOSFET General Description Product Summary V 700V 150 The AOT12N60 & AOTF12N60 have been fabricated DS using an advanced high voltage MOSFET process that is I (at V =10V) 12A D GS designed to deliver high levels of performance and R (at V =10V) < 0.55 DS(ON) GS robustness in popular AC-DC applications. By providing low R , C and C along with DS(on) iss rss guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. 100% UIS Tested 100% R Tested g For Halogen Free add suffix to part number: AOT12N60L & AOTF12N60L Top View TO-220F TO-220 D G G G D D S S S Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol AOT12N60 AOTF12N60 Units Drain-Source Voltage V 600 V DS Gate-Source Voltage V 30 V GS T =25C 12 12* C Continuous Drain I D T =100C Current 9.7 9.7* A C C Pulsed Drain Current I 48 DM C Avalanche Current I 5.5 A AR C Repetitive avalanche energy E 450 mJ AR G Single plused avalanche energy E 900 mJ AS MOSFET dv/dt ruggedness 50 dv/dt V/ns Peak diode recovery dv/dt 5 T =25C 278 50 W C P B D o o Power Dissipation Derate above 25 C 2.2 0.4 W/ C Junction and Storage Temperature Range T , T -55 to 150 C J STG Maximum lead temperature for soldering T 300 C purpose, 1/8 from case for 5 seconds L Thermal Characteristics Parameter Symbol AOT12N60 AOTF12N60 Units A,D Maximum Junction-to-Ambient R 65 65 C/W JA A Maximum Case-to-sink R CS 0.5 -- C/W Maximum Junction-to-Case R 0.45 2.5 C/W JC * Drain current limited by maximum junction temperature. Rev.6.0: June 2013 www.aosmd.com Page 1 of 6 AOT12N60/AOTF12N60 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS I =250A, V =0V, T =25C 600 D GS J BV Drain-Source Breakdown Voltage DSS I =250A, V =0V, T =150C 700 V D GS J BV Breakdown Voltage Temperature DSS o I =250A, V =0V 0.65 D GS V/ C Coefficient /TJ V =600V, V =0V 1 DS GS I Zero Gate Voltage Drain Current A DSS V =480V, T =125C 10 DS J I Gate-Body leakage current V =0V, V =30V 100 n GSS DS GS V V =5V I =250A Gate Threshold Voltage 3 4 4.5 V GS(th) DS D R Static Drain-Source On-Resistance V =10V, I =6A 0.46 0.55 GS D DS(ON) V =40V, I =6A g Forward Transconductance 20 S FS DS D V Diode Forward Voltage I =1A,V =0V 0.72 1 V SD S GS I Maximum Body-Diode Continuous Current 12 A S I Maximum Body-Diode Pulsed Current 48 A SM DYNAMIC PARAMETERS C Input Capacitance 1400 1751 2100 pF iss C Output Capacitance V =0V, V =25V, f=1MHz 130 164 200 pF GS DS oss C Reverse Transfer Capacitance 10 13 16 pF rss V =0V, V =0V, f=1MHz R Gate resistance 2.5 3.3 5 g GS DS SWITCHING PARAMETERS Q Total Gate Charge 40 50 nC g Q Gate Source Charge V =10V, V =480V, I =12A 9 11 nC GS DS D gs Q Gate Drain Charge 17.9 22 nC gd t Turn-On DelayTime 39 50 ns D(on) t Turn-On Rise Time V =10V, V =300V, I =12A, 70 85 ns GS DS D r R =25 t Turn-Off DelayTime G 122 150 ns D(off) t Turn-Off Fall Time 74 90 ns f t I =12A,dI/dt=100A/s,V =100V 311 373 rr Body Diode Reverse Recovery Time F DS ns Q I =12A,dI/dt=100A/s,V =100V 5.2 6.2 C rr Body Diode Reverse Recovery Charge F DS A. The value of R is measured with the device in a still air environment with T =25C. JA A B. The power dissipation P is based on T =150C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation D J(MAX) limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T =150C, Ratings are based on low frequency and duty cycles to keep initial T J(MAX) J =25C. D. The R is the sum of the thermal impedence from junction to case R and case to ambient. JA JC E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T =150C. The SOA curve provides a single pulse rating. J(MAX) G. L=60mH, I =5.5A, V =150V, R =25 , Starting T =25C AS DD G J THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.6.0: June 2013 www.aosmd.com Page 2 of 6