AOTF4185 40V P-Channel MOSFET General Description Product Summary V -40V The AOTF4185 combines advanced trench MOSFET - DS 40V technology with a low resistance package to provide I (at V =-10V) -34A D GS extremely low R . This device is ideal for load switch DS(ON) R (at V =-10V) < 16m DS(ON) GS and battery protection applications. R (at V =-4.5V) < 20m DS(ON) GS 100% UIS Tested 100% R Tested g TO220F D Top View Bottom View G S D S G G D S Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol Maximum Units DDrraaiinn--SSoouurrccee VVoollttaaggee VV --4400 VV DDSS Gate-Source Voltage V 20 V GS T =25C -34 C Continuous Drain I D Current T =100C -27 A C C Pulsed Drain Current I -100 DM C Avalanche Current I , I -42 A AS AR C Avalanche energy L=0.1mH E , E 88 mJ AS AR T =25C 33 C P W D B T =100C Power Dissipation 16 C Junction and Storage Temperature Range T , T -55 to 175 C J STG Thermal Characteristics Parameter Symbol Typ Max Units AD t 10s Maximum Junction-to-Ambient R 10 13 C/W JA Maximum Junction-to-Case Steady-State R 3 4.5 C/W JC Rev.2.0: May 2013 www.aosmd.com Page 1 of 6 AOTF4185 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =-250A, V =0V -40 V D GS DSS V =-40V, V =0V -1 DS GS I Zero Gate Voltage Drain Current A DSS T =55C -5 J V =0V, V = 20V I Gate-Body leakage current 100 nA GSS DS GS V V =V , I =250A Gate Threshold Voltage -1.7 -1.85 -2.5 V GS(th) DS GS D I On state drain current V =-10V, V =-5V -120 A GS DS D(ON) V =-10V, I =-20A 13 16 GS D m R Static Drain-Source On-Resistance T =125C 19 23 DS(ON) J V =-4.5V, I =-15A 16 20 m GS D V =-5V, I =-20A g Forward Transconductance 50 S FS DS D V Diode Forward Voltage I =-1A,V =0V -0.72 -1 V S GS SD I Maximum Body-Diode Continuous Current -20 A S DYNAMIC PARAMETERS C Input Capacitance 2550 pF iss V =0V, V =-20V, f=1MHz C Output Capacitance 280 pF oss GS DS C Reverse Transfer Capacitance 190 pF rss R Gate resistance V =0V, V =0V, f=1MHz 2.5 4 6 g GS DS SWITCHING PARAMETERS Q Total Gate Charge 42 55 nC g(10V) Q Total Gate Charge 18.6 nC g(4.5V) V =-10V, V =-20V, I =-20A GS DS D Q Gate Source Charge 7 nC gs Q Gate Drain Charge 8.6 nC gd t Turn-On DelayTime 9.4 ns D(on) tt TTuurrnn--OOnn RRiissee TTiimmee VV ==--1100VV,, VV ==--2200VV,, RR ==11..00,, 2200 nnss r GS DS L R =3 t Turn-Off DelayTime 55 ns GEN D(off) t Turn-Off Fall Time 30 ns f t I =-20A, dI/dt=500A/s 25 33 rr Body Diode Reverse Recovery Time F ns Q I =-20A, dI/dt=500A/s 75 nC rr Body Diode Reverse Recovery Charge F A. The value of R is measured with the device in a still air environment with T =25 C. JA A B. The power dissipation P is based on T =175 C, using junction-to-case thermal resistance, and is more useful in setting the upper D J(MAX) dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T =175 C. J(MAX) D. The R is the sum of the thermal impedance from junction to case R and case to ambient. JA JC E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T =175 C. J(MAX) G. The maximum current rating is limited by bond-wires. COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.2.0: May 2013 www.aosmd.com Page 2 of 6