AOD3N60/AOU3N60 600V,2.5A N-Channel MOSFET General Description Product Summary The AOD3N60 & AOU3N60 have been fabricated using an advanced high voltage MOSFET process that is V 700V 150 DS designed to deliver high levels of performance and I (at V =10V) 2.5A D GS robustness in popular AC-DC applications. R (at V =10V) < 3.5 DS(ON) GS By providing low R , C and C along with DS(on) iss rss guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. 100% UIS Tested 100% R Tested g TO252 TO251 DPAK D Top View Top View Bottom View Bottom View D D G G S S G S S D D G S G AOD3N60 AOU3N60 Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol Maximum Units Drain-Source Voltage V 600 V DS Gate-Source Voltage V 30 V GS T =25C Continuous Drain 2.5 C I D B Current T =100C 1.6 A C C Pulsed Drain Current I 8 DM C Avalanche Current I 2 A AR C Repetitive avalanche energy E 60 mJ AR H Single pulsed avalanche energy E 120 mJ AS Peak diode recovery dv/dt dv/dt 5 V/ns T =25C 56.8 W C P D B o o Power Dissipation Derate above 25 C 0.45 W/ C Junction and Storage Temperature Range T , T -50 to 150 C J STG Maximum lead temperature for soldering T 300 C purpose, 1/8 from case for 5 seconds L Thermal Characteristics Parameter Symbol Typical Maximum Units A,G Maximum Junction-to-Ambient R 45 55 C/W JA A Maximum Case-to-sink R CS - 0.5 C/W D,F R 1.8 2.2 C/W Maximum Junction-to-Case JC Rev 6: Jul 2011 www.aosmd.com Page 1 of 6 AOD3N60/AOU3N60 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS I =250A, V =0V, T =25C 600 D GS J BV Drain-Source Breakdown Voltage DSS I =250A, V =0V, T =150C 700 V D GS J BV DSS o Zero Gate Voltage Drain Current ID=250A, VGS=0V 0.65 V/ C /TJ V =600V, V =0V 1 DS GS I Zero Gate Voltage Drain Current DSS A V =480V, T =125C 10 DS J I Gate-Body leakage current V =0V, V =30V 100 n GSS DS GS V Gate Threshold Voltage V =5V I =250A 3 4 4.5 V GS(th) DS D V =10V, I =1.25A R Static Drain-Source On-Resistance 2.9 3.5 DS(ON) GS D g Forward Transconductance V =40V, I =1.25A 2.8 S DS D FS I =1A,V =0V V Diode Forward Voltage 0.64 1 V SD S GS I Maximum Body-Diode Continuous Current 2 A S I Maximum Body-Diode Pulsed Current 8 A SM DYNAMIC PARAMETERS C Input Capacitance 240 304 370 pF iss V =0V, V =25V, f=1MHz C Output Capacitance 25 31.4 38 pF oss GS DS C Reverse Transfer Capacitance 2.6 3.3 4 pF rss R Gate resistance V =0V, V =0V, f=1MHz 2.3 2.9 6 GS DS g SWITCHING PARAMETERS Q Total Gate Charge 9.9 12 nC g V =10V, V =480V, I =2.5A Q Gate Source Charge 2.1 3 nC gs GS DS D Q Gate Drain Charge 4.6 6 nC gd t Turn-On DelayTime 17 20 ns D(on) V =10V, V =300V, I =2.5A, t Turn-On Rise Time 17 20 ns r GS DS D R =25 t Turn-Off DelayTime 24 30 ns G D(off) t Turn-Off Fall Time 16 20 ns f t I =2.5A,dI/dt=100A/s,V =100V 175 210 rr Body Diode Reverse Recovery Time F DS ns Q I =2.5A,dI/dt=100A/s,V =100V 1.4 1.7 C rr Body Diode Reverse Recovery Charge F DS A. The value of R is measured with the device in a still air environment with T =25C. JA A B. The power dissipation P is based on T =150C in a TO252 package, using junction-to-case thermal resistance, and is more useful in D J(MAX) setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T =150C. J(MAX) D. The R is the sum of the thermal impedence from junction to case R and case to ambient. JA JC E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T =150C. J(MAX) 2 G.These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T =25C. A H. L=60mH, I =2A, V =150V, R =10 , Starting T =25C AS DD G J THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 6: Jul 2011 www.aosmd.com Page 2 of 6