X-On Electronics has gained recognition as a prominent supplier of 2N6045 Darlington Transistors across the USA, India, Europe, Australia, and various other global locations. 2N6045 Darlington Transistors are a product manufactured by Central Semiconductor. We provide cost-effective solutions for Darlington Transistors, ensuring timely deliveries around the world.

2N6045 Central Semiconductor

2N6045 electronic component of Central Semiconductor
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See Product Specifications
Part No.2N6045
Manufacturer: Central Semiconductor
Category: Darlington Transistors
Description: Transistors Darlington NPN Darl SW
Datasheet: 2N6045 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.3945 ea
Line Total: USD 2.39 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Mon. 25 Nov to Wed. 27 Nov
MOQ : 1
Multiples : 1
1 : USD 2.3945
10 : USD 2.0354
25 : USD 1.9143
100 : USD 1.6477
500 : USD 1.3376
1000 : USD 1.1491

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Collector- Base Voltage VCBO
Maximum DC Collector Current
Maximum Collector Cut-off Current
Pd - Power Dissipation
Mounting Style
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Continuous Collector Current
Power Dissipation
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Height
Length
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2N6045 from our Darlington Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N6045 and other electronic components in the Darlington Transistors category and beyond.

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2N6040 2N6041 2N6042 PNP 2N6043 2N6044 2N6045 NPN www.centralsemi.com COMPLEMENTARY SILICON POWER DESCRIPTION: DARLINGTON TRANSISTORS The CENTRAL SEMICONDUCTOR 2N6040 and 2N6043 Series types are Complementary Silicon Power Transistors, manufactured by the epitaxial base process, designed for general purpose amplifier applications. MARKING: FULL PART NUMBER TO-220 CASE 2N6040 2N6041 2N6042 MAXIMUM RATINGS: (T =25C) SYMBOL 2N6043 2N6044 2N6045 UNITS C Collector-Base Voltage V 60 80 100 V CBO Collector-Emitter Voltage V 60 80 100 V CEO Emitter-Base Voltage V 5.0 V EBO Continuous Collector Current I 8.0 A C Peak Collector Current I 16 A CM Base Current I 120 mA B Power Dissipation P 75 W D Operating and Storage Junction Temperature T , T -65 to +150 C J stg Thermal Resistance 1.67 C/W JC ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) C SYMBOL TEST CONDITIONS MIN MAX UNITS I V =Rated V 20 A CBO CB CBO I V =Rated V , V=1.5V 20 A CEV CE CEO BE(OFF) I V =Rated V , V =1.5V, T=150C 200 A CEV CE CEO BE(OFF) C I V =Rated V 20 A CEO CE CEO I V=5.0V 2.0 mA EBO EB BV I =100mA (2N6040, 2N6043) 60 V CEO C BV I =100mA (2N6041, 2N6044) 80 V CEO C BV I =100mA (2N6042, 2N6045) 100 V CEO C V I =4.0A, I =16mA (2N6040, 2N6041, 2N6043, 2N6044) 2.0 V CE(SAT) C B V I =3.0A, I =12mA (2N6042, 2N6045) 2.0 V CE(SAT) C B V I =8.0A, I=80mA 4.0 V CE(SAT) C B V I =8.0A, I=80mA 4.5 V BE(SAT) C B V V =4.0V, I=4.0A 2.8 V BE(ON) CE C h V =4.0V, I =4.0A (2N6040, 2N6041, 2N6043, 2N6044) 1,000 20,000 FE CE C h V =4.0V, I =3.0A (2N6042, 2N6045) 1,000 20,000 FE CE C h V =4.0V, I=8.0A 100 FE CE C R1 (16-November 2009)2N6040 2N6041 2N6042 PNP 2N6043 2N6044 2N6045 NPN COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS ELECTRICAL CHARACTERISTICS - Continued: (T =25C unless otherwise noted) C SYMBOL TEST CONDITIONS MIN MAX UNITS h V =4.0V, I =3.0A, f=1.0kHz 300 fe CE C f V =4.0V, I =3.0A, f=1.0MHz 4.0 MHz T CE C C V =10V, I =0, f=100kHz (NPN Types) 200 pF ob CB E C V =10V, I =0, f=100kHz (PNP Types) 300 pF ob CB E TO-220 CASE - MECHANICAL OUTLINE LEAD CODE: 1) BASE 2) COLLECTOR 3) EMITTER 4) COLLECTOR MARKING: FULL PART NUMBER R1 (16-November 2009) www.centralsemi.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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