2N6282 2N6283 2N6284 NPN 2N6285 2N6286 2N6287 PNP www.centralsemi.com COMPLEMENTARY SILICON DESCRIPTION: DARLINGTON POWER The CENTRAL SEMICONDUCTOR 2N6282, 2N6285 TRANSISTORS series devices are complementary silicon monolithic Darlington transistors, manufactured by the epitaxial base process, designed for general purpose high current, high gain amplifier and switching applications. MARKING: FULL PART NUMBER TO-3 CASE 2N6282 2N6283 2N6284 MAXIMUM RATINGS: (T =25C) SYMBOL 2N6285 2N6286 2N6287 UNITS C Collector-Base Voltage V 60 80 100 V CBO Collector-Emitter Voltage V 60 80 100 V CEO Emitter-Base Voltage V 5.0 V EBO Continuous Collector Current I 20 A C Peak Collector Current I 40 A CM Continuous Base Current I 0.5 A B Power Dissipation P 160 W D Operating and Storage Junction Temperature T , T -65 to +200 C J stg Thermal Resistance 1.09 C/W JC ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) C SYMBOL TEST CONDITIONS MIN MAX UNITS I V =Rated V , V=1.5V 0.5 mA CEX CE CEO EB I V =Rated V , V =1.5V, T=150C 5.0 mA CEX CE CEO EB C I V =Rated V 1.0 mA CEO CE CEO I V=5.0V 2.0 mA EBO EB BV I =100mA, (2N6282, 2N6285) 60 V CEO C BV I =100mA, (2N6283, 2N6286) 80 V CEO C BV I =100mA, (2N6284, 2N6287) 100 V CEO C V I =10A, I=40mA 2.0 V CE(SAT) C B V I =20A, I=200mA 3.0 V CE(SAT) C B V I =20A, I=200mA 4.0 V BE(SAT) C B V V =3.0V, I=10A 2.8 V BE(ON) CE C h V =3.0V, I=10A 750 18K FE CE C h V =3.0V, I=20A 100 FE CE C h V =3.0V, I =10A, f=1.0kHz 300 fe CE C f V =3.0V, I =10A, f=1.0MHz 4.0 MHz T CE C C V =10V, I =0, f=100kHz (NPN types) 400 pF ob CB E C V =10V, I =0, f=100kHz (PNP types) 600 pF ob CB E R1 (4-February 2014)2N6282 2N6283 2N6284 NPN 2N6285 2N6286 2N6287 PNP COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS TO-3 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Emitter Case) Collector MARKING: FULL PART NUMBER R1 (4-February 2014) www.centralsemi.com