2N6420 2N6421 2N6422 www.centralsemi.com 2N6423 DESCRIPTION: SILICON The CENTRAL SEMICONDUCTOR 2N6420 series PNP POWER TRANSISTORS devices are silicon PNP power transistors designed for high speed switching and high voltage amplifier applications. MARKING: FULL PART NUMBER TO-66 CASE 2N6422 MAXIMUM RATINGS: (T =25C) SYMBOL 2N6420 2N6421 2N6423 UNITS C Collector-Base Voltage V 250 375 500 V CBO Collector-Emitter Voltage V 175 250 300 V CEO Emitter-Base Voltage V 6.0 6.0 6.0 V EBO Continuous Collector Current I 1.0 2.0 2.0 A C Peak Collector Current I 5.0 A CM Continuous Base Current I 1.0 A B Power Dissipation P 35 W D Operating and Storage Junction Temperature T , T -65 to +200 C J stg Thermal Resistance 5.0 C/W JC ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) C SYMBOL TEST CONDITIONS MIN MAX UNITS I V =225V, V =1.5V (2N6420) 1.0 mA CEV CE BE I V =340V, V =1.5V (2N6421) 1.0 mA CEV CE BE I V =450V, V =1.5V (2N6422) 1.0 mA CEV CE BE I V =450V, V =1.5V (2N6423) 2.0 mA CEV CE BE I V =225V, V =1.5V, T =150C (2N6420) 3.0 mA CEV CE BE C I V =300V, V =1.5V, T =150C (2N6421) 3.0 mA CEV CE BE C I V =300V, V =1.5V, T =150C (2N6422) 3.0 mA CEV CE BE C I V =300V, V =1.5V, T =150C (2N6423) 5.0 mA CEV CE BE C I V =150V (2N6420) 10 mA CEO CE I V =150V (2N6421, 2N6422, 2N6423) 5.0 mA CEO CE I V =6.0V (2N6420) 5.0 mA EBO EB I V =6.0V (2N6421, 2N6422, 2N6423) 0.5 mA EBO EB BV I =50mA, (2N6420) 175 V CEO C BV I =50mA, (2N6421) 250 V CEO C BV I =50mA, (2N6422, 2N6423) 300 V CEO C V I =1.0A, I =125mA (2N6420 thru 2N6422) 0.75 V CE(SAT) C B V I =750mA, I =75mA (2N6423) 1.0 V CE(SAT) C B V I =1.0A, I =100mA (2N6420 thru 2N6422) 1.4 V BE(SAT) C B V I =750mA, I =75mA (2N6423) 1.8 V BE(SAT) C B h V =10V, I=100mA 40 FE CE C h V =10V, I =500mA (2N6420) 40 200 FE CE C R1 (2-September 2014)2N6420 2N6421 2N6422 2N6423 SILICON PNP POWER TRANSISTORS ELECTRICAL CHARACTERISTICS - Continued: (T =25C unless otherwise noted) C SYMBOL TEST CONDITIONS MIN MAX UNITS h V =2.0V, I =750mA (2N6423) 10 100 FE CE C h V =2.0V, I =1.0A (2N6421, 2N6422) 8.0 80 FE CE C h V =10V, I =1.0A (2N6420) 10 FE CE C h V =30V, I =100mA, f=1.0kHz 25 350 fe CE C f V =10V, I =200mA, f=5.0MHz (2N6420,21,22) 10 MHz T CE C f V =10V, I =200mA, f=5.0MHz (2N6423) 15 MHz T CE C C V =10V, I =0, f=1.0MHz 120 pF ob CB E t V =200V, I =1.0A, I=100mA, r CC C B1 R =200 (2N6420, 2N6421, 2N6422) 3.0 s L t V =200V, I =750mA, I=75mA, r CC C B1 R =267 (2N6423) 5.0 s L t V =200V, I =1.0A, I =I=100mA s CC C B1 B2 (2N6420, 2N6421, 2N6422) 4.0 s t V =200V, I =750mA, I =I =75mA (2N6423) 6.0 s s CC C B1 B2 t V =200V, I =1.0A, I =I=100mA f CC C B1 B2 (2N6420, 2N6421, 2N6422) 3.0 s t V =200V, I =750mA, I =I =75mA (2N6423) 3.0 s f CC C B1 B2 I V=100V 150 mA S/b CE TO-66 CASE - MECHANICAL OUTLINE MARKING: FULL PART NUMBER R1 (2-September 2014) www.centralsemi.com