CMLM0575 Multi Discrete Module www.centralsemi.com SURFACE MOUNT SILICON DESCRIPTION: N-CHANNEL MOSFET AND The CENTRAL SEMICONDUCTOR CMLM0575 is a LOW V SCHOTTKY DIODE F Multi Discrete Module consisting of a single N-Channel enhancement-mode MOSFET and a low V Schottky F diode packaged in a space saving SOT-563 surface mount case. This device is designed for small signal general purpose applications where size and operational efficiency are prime requirements. MARKING CODE: 75C SOT-563 CASE FEATURES: APPLICATIONS: High current MOSFET (I =650mA) D DC-DC converters ESD protection up to 2kV Boost converters Low r MOSFET (275m MAX V =2.5V) DS(ON) GS Motor drive controls Battery powered portable equipment Low V Schottky diode (0.47V MAX 0.5A) F MAXIMUM RATINGS - CASE: (T =25C) SYMBOL UNITS A Power Dissipation (Note 1) P 350 mW D Power Dissipation (Note 2) P 300 mW D Power Dissipation (Note 3) P 150 mW D Operating and Storage Junction Temperature T , T -65 to +150 C J stg Thermal Resistance 357 C/W JA MAXIMUM RATINGS - Q1: (T =25C) SYMBOL UNITS A Drain-Source Voltage V 20 V DS Gate-Source Voltage V 8.0 V GS Continuous Drain Current I 650 mA D MAXIMUM RATINGS - D1: (T =25C) SYMBOL UNITS A Peak Repetitive Reverse Voltage V 40 V RRM Continuous Forward Current I 500 mA F Peak Repetitive Forward Current, tp1.0ms I 3.5 A FRM Peak Forward Surge Current, tp=8.0ms I 10 A FSM ELECTRICAL CHARACTERISTICS - Q1: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN TYP MAX UNITS I , I V =4.5V, V=0 1.0 A GSSF GSSR GS DS I V =16V, V=0 100 nA DSS DS GS BV V =0, I=250A 20 V DSS GS D V V =V , I=250A 0.5 1.1 V GS(th) DS GS D V V =0, I=200mA 1.1 V SD GS S r V =4.5V, I=600mA 0.14 0.23 DS(ON) GS D r V =2.5V, I=500mA 0.2 0.275 DS(ON) GS D r V =1.8V, I=350mA 0.7 DS(ON) GS D 2 Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0mm 2 (2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0mm 2 (3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4mm R4 (1-October 2015)CMLM0575 Multi Discrete Module SURFACE MOUNT SILICON N-CHANNEL MOSFET AND LOW V SCHOTTKY DIODE F ELECTRICAL CHARACTERISTICS - Q1 Continued: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Q V =10V, V =4.5V, I=500mA 1.58 nC g(tot) DS GS D Q V =10V, V =4.5V, I=500mA 0.17 nC gs DS GS D Q V =10V, V =4.5V, I=500mA 0.24 nC gd DS GS D g V =10V, I=100mA 200 mS FS DS D C V =16V, V=0, f=1.0MHz 18 pF rss DS GS C V =16V, V=0, f=1.0MHz 100 pF iss DS GS C V =16V, V=0, f=1.0MHz 22 pF oss DS GS t V =10V, V =4.5V, I =200mA, R=10 10 ns on DD GS D G t V =10V, V =4.5V, I =200mA, R=10 25 ns off DD GS D G ELECTRICAL CHARACTERISTICS - D1: (T =25C) A SYMBOL TEST CONDITIONS MIN TYP MAX UNITS I V=10V 20 A R R I V=30V 100 A R R BV I=500A 40 V R R V I=100A 0.13 V F F V I=1.0mA 0.21 V F F V I=10mA 0.27 V F F V I=100mA 0.35 V F F V I=500mA 0.47 V F F C V =1.0V, f=1.0MHz 50 pF J R SOT-563 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Gate Q1 2) Source Q1 3) Cathode D1 4) Anode D1 5) Anode D1 6) Drain Q1 MARKING CODE: 75C R4 (1-October 2015) www.centralsemi.com