CMLM8205 Multi Discrete Module www.centralsemi.com SURFACE MOUNT SILICON DESCRIPTION: P-CHANNEL MOSFET AND The CENTRAL SEMICONDUCTOR CMLM8205 is a LOW V SCHOTTKY DIODE F Multi Discrete Module consisting of a single P-Channel enhancement-mode MOSFET and a low V Schottky diode packaged in a space saving F SOT-563 surface mount case. This device is designed for small signal general purpose applications where size and operational efficiency are prime requirements. MARKING CODE: C85 SOT-563 CASE FEATURES: APPLICATIONS: Low r Transistor (3.0 MAX V =5.0V) DC-DC Converters DS(on) GS Battery Powered Portable Equipment Low V Shottky Diode (0.47V MAX 0.5A) F MAXIMUM RATINGS - CASE: (T =25C) SYMBOL UNITS A Power Dissipation (Note 1) P 350 mW D Power Dissipation (Note 2) P 300 mW D Power Dissipation (Note 3) P 150 mW D Operating and Storage Junction Temperature T , T -65 to +150 C J stg Thermal Resistance 357 C/W JA MAXIMUM RATINGS - Q1: (T =25C) SYMBOL UNITS A Drain-Source Voltage V 50 V DS Drain-Gate Voltage V 50 V DG Gate-Source Voltage V 20 V GS Continuous Drain Current I 280 mA D Continuous Source Current (Body Diode) I 280 mA S Maximum Pulsed Drain Current I 1.5 A DM Maximum Pulsed Source Current I 1.5 A SM MAXIMUM RATINGS - D1: (T =25C) SYMBOL UNITS A Peak Repetitive Reverse Voltage V 40 V RRM Continuous Forward Current I 500 mA F Peak Repetitive Forward Current, tp1.0ms I 3.5 A FRM Peak Forward Surge Current, tp=8.0ms I 10 A FSM ELECTRICAL CHARACTERISTICS - Q1: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN MAX UNITS I , I V =20V, V=0 100 nA GSSF GSSR GS DS I V =50V, V=0 1.0 A DSS DS GS I V =50V, V =0, T=125C 500 A DSS DS GS J I V =10V, V=10V 50 mA D(ON) GS DS BV V =0, I=10A 50 V DSS GS D V V =V , I=250A 1.0 2.5 V GS(th) DS GS D 2 Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0mm 2 (2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0mm 2 (3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4mm R3 (1-July 2015)CMLM8205 Multi Discrete Module SURFACE MOUNT SILICON P-CHANNEL MOSFET AND LOW V SCHOTTKY DIODE F ELECTRICAL CHARACTERISTICS - Q1 - Continued: SYMBOL TEST CONDITIONS MIN MAX UNITS V V =10V, I=500mA 1.5 V DS(ON) GS D V V =5.0V, I =50mA 0.15 V DS(ON) GS D V V =0, I=115mA 1.3 V SD GS S r V =10V, I=500mA 2.5 DS(ON) GS D r V =10V, I =500mA, T=125C 4.0 DS(ON) GS D J r V =5.0V, I=50mA 3.0 DS(ON) GS D r V =5.0V, I =50mA, T=125C 5.0 DS(ON) GS D J g V =10V, I=200mA 200 mS FS DS D C V =25V, V =0, f=1.0MHz 7.0 pF rss DS GS C V =25V, V =0, f=1.0MHz 70 pF iss DS GS C V =25V, V =0, f=1.0MHz 15 pF oss DS GS t , t V =30V, V =10V, I =200mA, on off DD GS D R =25, R=150 20 ns G L ELECTRICAL CHARACTERISTICS - D1: (T =25C) A I V=10V 20 A R R I V=30V 100 A R R BV I=500A 40 V R R V I=100A 0.13 V F F V I=1.0mA 0.21 V F F V I=10mA 0.27 V F F V I=100mA 0.35 V F F V I=500mA 0.47 V F F C V =1.0V, f=1.0MHz 50 pF J R SOT-563 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Gate Q1 2) Source Q1 3) Cathode D1 4) Anode D1 5) Anode D1 6) Drain Q1 MARKING CODE: C85 R3 (1-July 2015) www.centralsemi.com