CMPTA29 SURFACE MOUNT www.centralsemi.com HIGH VOLTAGE DESCRIPTION: NPN SILICON The CENTRAL SEMICONDUCTOR CMPTA29 is an DARLINGTON TRANSISTOR NPN silicon darlington transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring extremely high voltage and high gain. MARKING CODE: C29 SOT-23 CASE MAXIMUM RATINGS: (T =25C) SYMBOL UNITS A Collector-Base Voltage V 100 V CBO Collector-Emitter Voltage V 100 V CES Emitter-Base Voltage V 12 V EBO Continuous Collector Current I 500 mA C Power Dissipation P 350 mW D Operating and Storage Junction Temperature T T -65 to +150 C J, stg Thermal Resistance 357 C/W JA ELECTRICAL CHARACTERISTICS: (T =25C) unless otherwise noted) A SYMBOL TEST CONDITIONS MIN MAX UNITS I V=80V 500 nA CES CE I V=80V 100 nA CBO CB I V=10V 100 nA EBO BE BV I=100A 100 V CES C BV I=100A 100 V CBO C BV I=10A 12 V EBO E V I =10mA, I =10A 1.2 V CE(SAT) C B V I =100mA, I =100A 1.5 V CE(SAT) C B V V =5.0V, I=100mA 2.0 V BE(ON) CE C h V =5.0V, I=10mA 10,000 FE CE C h V =5.0V, I=100mA 10,000 FE CE C f V =5.0V, I =10mA, f=100MHz 125 MHz T CE C C V =10V, I =0, f=1.0MHz 8.0 pF ob CB E R4 (3-February 2010)CMPTA29 SURFACE MOUNT HIGH VOLTAGE NPN SILICON DARLINGTON TRANSISTOR SOT-23 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Emitter 3) Collector MARKING CODE: C29 R4 (3-February 2010) www.centralsemi.com