CMUDM8004 SURFACE MOUNT www.centralsemi.com P-CHANNEL DESCRIPTION: ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CMUDM8004 SILICON MOSFET is an Enhancement-mode P-Channel MOSFET, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low r and DS(on) Low Theshold Voltage. MARKING CODE: 84C SOT-523 CASE FEATURES: Devices are Halogen Free by design ESD Protection up to 2kV Low r DS(on) APPLICATIONS: Low Threshold Voltage Load/Power Switches Logic Level Compatible Power Supply Converter Circuits Small, SOT-523 Surface Mount Package Battery Powered Portable Devices Complimentary N-Channel MOSFET: CMUDM7004 MAXIMUM RATING: (T =25C) SYMBOL UNITS A Drain-Source Voltage V 30 V DS Gate-Source Voltage V 8.0 V GS Continuous Drain Current I 450 mA D Power Dissipation P 250 mW D Operating and Storage Junction Temperature T , T -65 to +150 C J stg ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN TYP MAX UNITS I , I V =8.0V, V=0 3.0 A GSSF GSSR GS DS I V =30V, V=0 1.0 A DSS DS GS BV V =0, I=100A 30 V DSS GS D V V =V , I=250A 0.5 1.0 V GS(th) DS GS D V V =0, I=100mA 1.1 V SD GS S r V =4.5V, I=430mA 1.0 1.1 DS(ON) GS D r V =2.5V, I=200mA 1.5 2.0 DS(ON) GS D r V =1.8V, I=100mA 2.6 3.3 DS(ON) GS D Q V =10V, V =4.5V, I=1.0A 0.88 nC g(tot) DS GS D Q V =10V, V =4.5V, I=1.0A 0.35 nC gs DS GS D Q V =10V, V =4.5V, I=1.0A 0.128 nC gd DS GS D g V =10V, I=100mA 200 mS FS DS D C V =25V, V =0, f=1.0MHz 8.0 10 pF rss DS GS C V =25V, V =0, f=1.0MHz 45 55 pF iss DS GS C V =25V, V =0, f=1.0MHz 9.0 15 pF oss DS GS R3 (2-August 2011)CMUDM8004 SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-523 CASE - MECHANICAL OUTLINE PIN CONFIGURATION (Bottom View) LEAD CODE: 1) Gate 2) Source 3) Drain MARKING CODE: 84C R3 (2-August 2011) www.centralsemi.com