X-On Electronics has gained recognition as a prominent supplier of CMUDM8005 TR MOSFETs across the USA, India, Europe, Australia, and various other global locations. CMUDM8005 TR MOSFETs are a product manufactured by Central Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

CMUDM8005 TR Central Semiconductor

CMUDM8005 TR electronic component of Central Semiconductor
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See Product Specifications
Part No.CMUDM8005 TR
Manufacturer: Central Semiconductor
Category: MOSFETs
Description: MOSFET SMD- Small Signal P-Channel Mosfet
Datasheet: CMUDM8005 TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.4664 ea
Line Total: USD 0.47 
Availability - 23446
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
23446
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.4664
10 : USD 0.4642
100 : USD 0.4059
500 : USD 0.3608
1000 : USD 0.3366
3000 : USD 0.297
6000 : USD 0.2915
9000 : USD 0.2871
24000 : USD 0.2805

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Gate Charge Qg
Factory Pack Quantity :
Typical Turn-Off Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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We are delighted to provide the CMUDM8005 TR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CMUDM8005 TR and other electronic components in the MOSFETs category and beyond.

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CMUDM8005 SURFACE MOUNT SILICON www.centralsemi.com P-CHANNEL DESCRIPTION: ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CMUDM8005 MOSFET is an enhancement-mode P-Channel MOSFET, manufactured by the P-Channel DMOS process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers low r and DS(ON) low theshold voltage. MARKING CODE: 5C8 FEATURES: SOT-523 CASE ESD protection up to 1800V (Human Body Model) 300mW power dissipation APPLICATIONS: Very low r DS(ON) Load/Power switches Low threshold voltage Power supply converter circuits Logic level compatible Battery powered portable equipment Small, SOT-523 surface mount package MAXIMUM RATINGS: (T =25C) SYMBOL UNITS A Drain-Source Voltage V 20 V DS Gate-Source Voltage V 8.0 V GS Continuous Drain Current (Steady State - Note 1) I 650 mA D Continuous Source Current (Body Diode) I 250 mA S Maximum Pulsed Drain Current I 1.0 A DM Power Dissipation (Note 1) P 300 mW D Operating and Storage Junction Temperature T , T -65 to +150 C J stg ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN TYP MAX UNITS I , I V =4.5V, V=0 10 A GSSF GSSR GS DS I V =16V, V=0 100 nA DSS DS GS BV V =0, I=250A 20 V DSS GS D V V =V , I=250A 0.5 1.0 V GS(th) DS GS D V V =0, I=250mA 1.1 V SD GS S r V =4.5V, I=350mA 0.25 0.36 DS(ON) GS D r V =2.5V, I=300mA 0.37 0.5 DS(ON) GS D r V =1.8V, I=150mA 0.8 DS(ON) GS D g V =10V, I=200mA 0.2 S FS DS D C V =16V, V =0, f=1.0MHz 25 pF rss DS GS C V =16V, V =0, f=1.0MHz 100 pF iss DS GS C V =16V, V =0, f=1.0MHz 21 pF oss DS GS 2 Notes: (1) Mounted on 2 inch square FR-4 PCB with copper mounting pad area of 1.13in R4 (5-June 2013)CMUDM8005 SURFACE MOUNT SILICON P-CHANNEL ENHANCEMENT-MODE MOSFET ELECTRICAL CHARACTERISTICS - Continued: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN TYP UNITS Q V =10V, V =4.5V, I =200mA g(tot) DS GS D 1.2 nC Q V =10V, V =4.5V, I =200mA gs DS GS D 0.24 nC Q V =10V, V =4.5V, I =200mA gd DS GS D 0.36 nC t V =10V, V =4.5V, I =200mA, R=10 38 ns on DD GS D G t V =10V, V =4.5V, I =200mA, R=10 48 ns off DD GS D G SOT-523 CASE - MECHANICAL OUTLINE PIN CONFIGURATION (Bottom View) LEAD CODE: 1) Gate 2) Source 3) Drain MARKING CODE: 5C8 R4 (5-June 2013) www.centralsemi.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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