CMXD4448 SURFACE MOUNT www.centralsemi.com TRIPLE ISOLATED DESCRIPTION: HIGH SPEED The CENTRAL SEMICONDUCTOR CMXD4448 SILICON SWITCHING DIODES type contains three (3) Isolated High Speed Silicon Switching Diodes, manufactured by the epitaxial planar process, epoxy molded in a SUPERmini surface mount package, and designed for applications requiring high speed switching. MARKING CODE: X48 SOT-26 CASE MAXIMUM RATINGS: (T =25C) SYMBOL UNITS A Continuous Reverse Voltage V 75 V R Peak Repetitive Reverse Voltage V 100 V RRM Continuous Forward Current I 250 mA F Peak Repetitive Forward Current I 500 mA FRM Peak Forward Surge Current, tp=1.0s I 4.0 A FSM Peak Forward Surge Current, tp=1.0s I 1.0 A FSM Power Dissipation P 350 mW D Operating and Storage Junction Temperature T , T -65 to +150 C J stg Thermal Resistance 357 C/W JA ELECTRICAL CHARACTERISTICS PER DIODE: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN MAX UNITS I V=20V 25 nA R R BV I=5.0A 75 V R R BV I=100A 100 V R R V I=100mA 1.0 V F F C V =0, f=1.0MHz 4.0 pF T R t I =I =10mA, I =1.0mA, R=100 4.0 ns rr R F rr L R5 (12-February 2010)CMXD4448 SURFACE MOUNT TRIPLE ISOLATED HIGH SPEED SILICON SWITCHING DIODES SOT-26 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Anode D1 2) Anode D2 3) Anode D3 4) Cathode D3 5) Cathode D2 6) Cathode D1 MARKING CODE: X48 R5 (12-February 2010) www.centralsemi.com