X-On Electronics has gained recognition as a prominent supplier of CMXDM7002A MOSFETs across the USA, India, Europe, Australia, and various other global locations. CMXDM7002A MOSFETs are a product manufactured by Central Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

CMXDM7002A Central Semiconductor

CMXDM7002A electronic component of Central Semiconductor
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Part No.CMXDM7002A
Manufacturer: Central Semiconductor
Category: MOSFETs
Description: MOSFET Dual N-Ch FET 60V 60Vdg 40Vgs 350Pd
Datasheet: CMXDM7002A Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 1.1853
10 : USD 0.5346
100 : USD 0.2657
500 : USD 0.2009
1000 : USD 0.1577
3000 : USD 0.1372
9000 : USD 0.1296
24000 : USD 0.1199
45000 : USD 0.1166
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Product
Series
Transistor Type
Brand
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the CMXDM7002A from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CMXDM7002A and other electronic components in the MOSFETs category and beyond.

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CMXDM7002A SURFACE MOUNT SILICON www.centralsemi.com DUAL N-CHANNEL DESCRIPTION: ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CMXDM7002A MOSFET is special dual version of the 2N7002 enhancement- mode N-Channel MOSFET manufactured by the N-Channel DMOS Process, and designed for high speed pulsed amplifier and driver applications. This special dual transistor device offers low r and DS(ON) low V DS(ON). MARKING CODE: X02A SOT-26 CASE MAXIMUM RATINGS: (T =25C) SYMBOL UNITS A Drain-Source Voltage V 60 V DS Drain-Gate Voltage V 60 V DG Gate-Source Voltage V 40 V GS Continuous Drain Current I 280 mA D Continuous Source Current (Body Diode) I 280 mA S Maximum Pulsed Drain Current I 1.5 A DM Maximum Pulsed Source Current I 1.5 A SM Power Dissipation P 350 mW D Operating and Storage Junction Temperature T , T -65 to +150 C J stg Thermal Resistance 357 C/W JA ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN MAX UNITS I , I V =20V, V=0 100 nA GSSF GSSR GS DS I V =60V, V=0 1.0 A DSS DS GS I V =60V, V =0, T=125C 500 A DSS DS GS J I V =10V, V=10V 500 mA D(ON) GS DS BV V =0, I=10A 60 V DSS GS D V V =V , I=250A 1.0 2.5 V GS(th) DS GS D V V =10V, I=500mA 1.0 V DS(ON) GS D V V =5.0V, I =50mA 0.15 V DS(ON) GS D V V =0, I=400mA 1.2 V SD GS S r V =10V, I=500mA 2.0 DS(ON) GS D r V =10V, I =500mA, T=125C 3.5 DS(ON) GS D J r V =5.0V, I=50mA 3.0 DS(ON) GS D r V =5.0V, I =50mA, T=125C 5.0 DS(ON) GS D J g V =10V, I=200mA 80 mS FS DS D C V =25V, V =0, f=1.0MHz 5.0 pF rss DS GS C V =25V, V =0, f=1.0MHz 50 pF iss DS GS C V =25V, V =0, f=1.0MHz 25 pF oss DS GS R3 (9-February 2015)CMXDM7002A SURFACE MOUNT SILICON DUAL N-CHANNEL ENHANCEMENT-MODE MOSFET ELECTRICAL CHARACTERISTICS PER TRANSISTOR - Continued: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS TYP MAX UNITS Q V =30V, V =4.5V, I=100mA 0.592 nC g(tot) DS GS D Q V =30V, V =4.5V, I=100mA 0.196 nC gs DS GS D Q V =30V, V =4.5V, I=100mA 0.148 nC gd DS GS D t , t V =30V, V =10V, I=200mA, on off DD GS D R =25, R=150 20 ns G L SOT-26 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Gate Q1 2) Source Q1 3) Drain Q2 4) Gate Q2 5) Source Q2 6) Drain Q1 MARKING CODE: X02A R3 (9-February 2015) www.centralsemi.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Central Semi
CENTRAL SEMICONDUCTOR
Central Semiconductor Corp
Central Semiconductor Corp.
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