CZT122 NPN
CZT127 PNP
www.centralsemi.com
SURFACE MOUNT SILICON
DESCRIPTION:
COMPLEMENTARY POWER
The CENTRAL SEMICONDUCTOR CZT122, CZT127
DARLINGTON TRANSISTORS
devices are complementary silicon power Darlington
transistors manufactured in a surface mount package
designed for low speed switching and amplifier
applications.
MARKING: FULL PART NUMBER
SOT-223 CASE
MAXIMUM RATINGS: (T =25C) SYMBOL UNITS
A
Collector-Base Voltage V 100 V
CBO
Collector-Emitter Voltage V 100 V
CEO
Emitter-Base Voltage V 5.0 V
EBO
Continuous Collector Current I 5.0 A
C
Peak Collector Current I 8.0 A
CM
Continuous Base Current I 120 mA
B
Power Dissipation P 2.0 W
D
Operating and Storage Junction Temperature T T -65 to +150 C
J, stg
Thermal Resistance 62.5 C/W
JA
ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted)
A
SYMBOL TEST CONDITIONS MIN MAX UNITS
I V=50V 500 A
CEO CE
I V=100V 200 A
CBO CB
I V=5.0V 2.0 mA
EBO EB
BV I=30mA 100 V
CEO C
V I =3.0A, I =12mA 2.0 V
CE(SAT) C B
V I =5.0A, I =20mA 4.0 V
CE(SAT) C B
V V =3.0V, I =3.0A 2.5 V
BE(ON) CE C
h V =3.0V, I=500mA 1000
FE CE C
h V =3.0V, I=3.0A 1000
FE CE C
f V =4.0V, I =3.0A, f=1.0MHz 4.0 MHz
T CE C
C V =10V, I =0, f=1.0MHz (CZT122) 200 pF
ob CB E
C V =10V, I =0, f=1.0MHz (CZT127) 300 pF
ob CB E
R5 (23-August 2017)CZT122 NPN
CZT127 PNP
SURFACE MOUNT SILICON
COMPLEMENTARY POWER
DARLINGTON TRANSISTORS
SOT-223 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Base
2) Collector
3) Emitter
4) Collector
MARKING:
FULL PART NUMBER
R5 (23-August 2017)
www.centralsemi.com