MJE700 THRU MJE703 PNP
MJE800 THRU MJE803 NPN
www.centralsemi.com
COMPLEMENTARY
DESCRIPTION:
POWER DARLINGTON TRANSISTORS
The CENTRAL SEMICONDUCTOR MJE700, MJE800
series devices are medium power complementary
silicon Darlington transistors designed for audio amplifier
applications as complementary output devices.
MARKING: FULL PART NUMBER
TO-126 CASE
MJE700 MJE702
MJE701 MJE703
MJE800 MJE802
MAXIMUM RATINGS: (T =25C) SYMBOL MJE801 MJE803 UNITS
C
Collector-Base Voltage V 60 80 V
CBO
Collector-Emitter Voltage V 60 80 V
CEO
Emitter-Base Voltage V 5.0 V
EBO
Continuous Collector Current I 4.0 A
C
Continuous Base Current I 100 mA
B
Power Dissipation P 40 W
D
Operating and Storage Junction Temperature T , T -65 to +150 C
J stg
Thermal Resistance 3.13 C/W
JC
ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted)
C
SYMBOL TEST CONDITIONS MIN MAX UNITS
I V =Rated V 100 A
CBO CB CBO
I V =Rated V , T=100C 500 A
CBO CB CBO C
I V =Rated V 100 A
CEO CE CEO
I V=5.0V 2.0 mA
EBO EB
BV I =50mA (MJE702,703,802,803) 80 V
CEO C
BV I =50mA (MJE700,701,800,801) 60 V
CEO C
V I =1.5A, I =30mA (MJE700,702,800,802) 2.5 V
CE(SAT) C B
V I =2.0A, I =40mA (MJE701,703,801,803) 2.8 V
CE(SAT) C B
V I =4.0A, I=40mA 3.0 V
CE(SAT) C B
V V =3.0V, I =1.5A (MJE700,702,800,802) 2.5 V
BE(ON) CE C
V V =3.0V, I =2.0A (MJE701,703,801,803) 2.5 V
BE(ON) CE C
V V =3.0V, I=4.0A 3.0 V
BE(ON) CE C
h V =3.0V, I =1.5A (MJE700,702,800,802) 750
FE CE C
h V =3.0V, I =2.0A (MJE701,703,801,803) 750
FE CE C
h V =3.0V, I=4.0A 100
FE CE C
f V =3.0V, I =1.5A, f=1.0MHz 1.0 MHz
T CE C
R2 (23-January 2014)MJE700 THRU MJE703 PNP
MJE800 THRU MJE803 NPN
COMPLEMENTARY
POWER DARLINGTON TRANSISTORS
TO-126 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Emitter
2) Collector
3) Base
MARKING:
FULL PART NUMBER
R2 (23-January 2014)
www.centralsemi.com