MPSA12 MPSA13 MPSA14 www.centralsemi.com DESCRIPTION: SILICON The CENTRAL SEMICONDUCTOR MPSA12 series NPN DARLINGTON TRANSISTORS devices are silicon NPN Darlington transistors, manufactured by the epitaxial planar process, designed for applications requiring extremely high gain. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (T =25C) SYMBOL MPSA12 MPSA13 MPSA14 UNITS A Collector-Base Voltage V - 30 30 V CBO Collector-Emitter Voltage V 20 30 30 V CES Emitter-Base Voltage V 10 V EBO Continuous Collector Current I 500 mA C Power Dissipation P 625 mW D Operating and Storage Junction Temperature T , T -65 to +150 C J stg Thermal Resistance 200 C/W JA ELECTRICAL CHARACTERISTICS: (T =25C) MPSA12 MPSA13 MPSA14 A SYMBOL TEST CONDITIONS MIN MAX MIN MAX MIN MAX UNITS I V=15V - 100 - - - - nA CBO CB I V =30V - - - 100 - 100 nA CBO CB I V=15V - 100 - - - - nA CES CE I V =10V - 100 - 100 - 100 nA EBO EB BV I=100A 20 - 30 - 30 - V CES C V I =10mA, I=10A - 1.0 - - - - V CE(SAT) C B V I =100mA, I=100A - - - 1.5 - 1.5 V CE(SAT) C B V V =5.0V, I=10mA - 1.4 - - - - V BE(ON) CE B V V =5.0V, I=100mA - - - 2.0 - 2.0 V BE(ON) CE B h V =5.0V, I=10mA 20K - 5K - 10K - FE CE C h V =5.0V, I=100mA - - 10K - 20K - FE CE C f V =5.0V, I=10mA, f=100MHz - - 125 - 125 - MHz T CE C R1 (18-March 2014)MPSA12 MPSA13 MPSA14 SILICON NPN DARLINGTON TRANSISTORS TO-92 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R1 (18-March 2014) www.centralsemi.com