MPSA12
MPSA13
MPSA14
www.centralsemi.com
DESCRIPTION:
SILICON
The CENTRAL SEMICONDUCTOR MPSA12 series
NPN DARLINGTON TRANSISTORS
devices are silicon NPN Darlington transistors,
manufactured by the epitaxial planar process, designed
for applications requiring extremely high gain.
MARKING: FULL PART NUMBER
TO-92 CASE
MAXIMUM RATINGS: (T =25C) SYMBOL MPSA12 MPSA13 MPSA14 UNITS
A
Collector-Base Voltage V - 30 30 V
CBO
Collector-Emitter Voltage V 20 30 30 V
CES
Emitter-Base Voltage V 10 V
EBO
Continuous Collector Current I 500 mA
C
Power Dissipation P 625 mW
D
Operating and Storage Junction Temperature T , T -65 to +150 C
J stg
Thermal Resistance 200 C/W
JA
ELECTRICAL CHARACTERISTICS: (T =25C) MPSA12 MPSA13 MPSA14
A
SYMBOL TEST CONDITIONS MIN MAX MIN MAX MIN MAX UNITS
I V=15V - 100 - - - - nA
CBO CB
I V =30V - - - 100 - 100 nA
CBO CB
I V=15V - 100 - - - - nA
CES CE
I V =10V - 100 - 100 - 100 nA
EBO EB
BV I=100A 20 - 30 - 30 - V
CES C
V I =10mA, I=10A - 1.0 - - - - V
CE(SAT) C B
V I =100mA, I=100A - - - 1.5 - 1.5 V
CE(SAT) C B
V V =5.0V, I=10mA - 1.4 - - - - V
BE(ON) CE B
V V =5.0V, I=100mA - - - 2.0 - 2.0 V
BE(ON) CE B
h V =5.0V, I=10mA 20K - 5K - 10K -
FE CE C
h V =5.0V, I=100mA - - 10K - 20K -
FE CE C
f V =5.0V, I=10mA, f=100MHz - - 125 - 125 - MHz
T CE C
R1 (18-March 2014)MPSA12
MPSA13
MPSA14
SILICON
NPN DARLINGTON TRANSISTORS
TO-92 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Emitter
2) Base
3) Collector
MARKING:
FULL PART NUMBER
R1 (18-March 2014)
www.centralsemi.com