MPSA26 MPSA27 www.centralsemi.com SILICON DESCRIPTION: NPN DARLINGTON TRANSISTORS The CENTRAL SEMICONDUCTOR MPSA26 and MPSA27 are silicon NPN Darlington transistors manufactured by the epitaxial planar process and designed for applications requiring extremely high gain. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (T =25C) SYMBOL MPSA26 MPSA27 UNITS A Collector-Base Voltage V 50 60 V CBO Collector-Emitter Voltage V 50 60 V CES Emitter-Base Voltage V 10 V EBO Continuous Collector Current I 500 mA C Power Dissipation P 625 mW D Operating and Storage Junction Temperature T , T -65 to +150 C J stg Thermal Resistance 200 C/W JA ELECTRICAL CHARACTERISTICS: (T =25C) MPSA26 MPSA27 A SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS I V=40V - 100 - - nA CBO CB I V=50V - - - 100 nA CBO CB I V=40V - 500 - - nA CES CE I V=50V - - - 500 nA CES CE I V=10V - 100 - 100 nA EBO EB BV I=100A 50 - 60 - V CBO C BV I=100A 50 - 60 - V CES C V I =100mA, I=100A - 1.5 - 1.5 V CE(SAT) C B V V =5.0V, I=100mA - 2.0 - 2.0 V BE(ON) CE C h V =5.0V, I=10mA 10,000 - 10,000 - FE CE C h V =5.0V, I=100mA 10,000 - 10,000 - FE CE C f V =5.0V, I=10mA, f=100MHz 125 - 125 - MHz T CE C R0 (18-March 2014)MPSA26 MPSA27 SILICON NPN DARLINGTON TRANSISTORS TO-92 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R0 (18-March 2014) www.centralsemi.com