JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-223 Plastic-Encapsulate Transistors BCP51,52,53 TRANSISTOR (PNP) SOT-223 FEATURES z For AF driver and output stages 1. BASE z High collector current 2. COLLECTOR z Low collector-emitter saturation voltage 3. EMITTER z Complementary types: BCP54...BCP56 (NPN) MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter BCP51 BCP52 BCP53 Unit V Collector-Base Voltage -45 -60 -100 V CBO V Collector-Emitter Voltage -45 -60 -80 V CEO V Emitter-Base Voltage -5 V EBO I Collector Current -Continuous -1 A C P Collector Power Dissipation 1.5 W C R Thermal Resistance Junction to Ambient 94 /W JA T Storage Temperature Range -65~+150 stg ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Max Unit Collector-base breakdown voltage BCP51 -45 BCP52 V I =- 0.1mA,I =0 -60 V (BR)CBO C E BCP53 -100 Collector-emitter breakdown voltage BCP51 -45 BCP52 V I = -10mA,I =0 -60 V (BR)CEO C B BCP53 -80 Base-emitter breakdown voltage V I = -10A,I=0 -5 V (BR)EBO E C Collector cut-off current I V = -30 V, I=0 -100nA CBO CB E h V =-2V, I=-5mA 25 FE(1) CE C DC current gain h V = -2V, I =-150m A 63 250 FE(2) CE C h V = -2V, I =-500m A 25 FE(3) CE C V I =-500mA,I=-50mA -0.5 V Collector-emitter saturation voltage CE(sat) C B Base-emitter voltage V V =-2V, I =-500m A -1 V BE CE C Transition frequency f V =-10V,I=-50mA,f=100MHz 100 MHz T CE C CLASSIFICATION OF h FE(2) Rank BCP51-10, BCP52-10, BCP53-10 BCP51-16, BCP52-16, BCP53-16 63-160 100-250 Range www.cj-elec.com 14 E ,Jan,2017Typical Characteristics hTypical Characteristics ha Static Characteristic h I FE C -250 1000 COMMON COMMON EMITTER EMITTER V = -2V CE T =25 a T =100 -200 a -1mA -0.9mA -0.8mA -150 -0.7mA T =25 a 100 -0.6mA -100 -0.5mA -0.4mA -0.3mA -50 -0.2mA I =-0.1mA B -0 10 -0 -1 -2 -3 -4 -5 -1 -10 -100 -1000 COLLECTOR CURRENT I (mA) COLLECTOR-EMITTER VOLTAGE V (V) C CE V V I I BEsat CEsat C C -1000 -1000 =10 =10 -800 T =25 a T =100 a -600 -100 T =100 a -400 -200 T =25 a -10 -0 -0.1 -1 -10 -100 -1000 -0.1 -1 -10 -100 -1000 COLLECTOR CURREMT I (mA) COLLECTOR CURREMT I (mA) C C I V C BE f I T C -1000 300 COMMON EMITTER COMMON EMITTER V =-2V V =-10V CE CE T =25 a -100 100 -10 -1 -0.1 10 -0 -200 -400 -600 -800 -1000 -1200 -3 -10 -20 -30 -40 -50 -60 COLLECTOR CURRENT I (mA) BASE-EMMITER VOLTAGE V (mV) C BE P T C /C V /V C a ob ib CB EB 1800 1000 f=1MHz I =0/I =0 E C 1500 T =25 C a ib 1200 100 900 C ob 600 10 300 0 1 0 25 50 75 100 125 150 -0.1 -1 -10 -30 AMBIENT TEMPERATURE T ( ) REVERSE VOLTAGE V (V) a www.cj-elec.com 2 E,Jan,2017 T =100 a T =25 a BASE-EMITTER SATURATION VOLTAGE V (mV) COLLECTOR CURRENT I (mA) BEsat C COLLECTOR CURRENT I (mA) CAPACITANCE C (pF) C COLLECTOR-EMITTER SATURATION COLLECTOR POWER DISSIPATION TRANSITION FREQUENCY f (MHz) VOLTAGE V (mV) DC CURRENT GAIN h T P (mW) FE CEsat C