JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD DFN1006-3L Plastic-Encapsulate MOSFETs CJBA3541K N-Channel MOSFET I V R MAX D (BR)DSS DS(on) DFN1006-3L m 4.5V 500 0.6A 30V 6 00m 2.5V FEATURE APPLICATION z Lead Free Product is Acquired z Load/ Power Switching z Surface Mount Package z Interfacing Switching z N-Channel Switch with Low R (on) DS z Battery Management for Ultra Small z Operated at Low Logic Level Gate Drive Portable Electronics z ESD Protected Gate z Logic Level Shift MARKING: Equivalent Circuit 35 ABSOLUTE MAXIMUM RATINGS (T =25 unless otherwise noted) a Symbol Parameter Value Unit Drain-Source Voltage V 30 V DS Typical Gate-Source Voltage V 12 V GS Continuous Drain Current (note 1) I 0.6 A D Pulsed Drain Current (tp=10us) I 1.8 A DM Power Dissipation (note 1) P 100 mW D Thermal Resistance from Junction to Ambient (note 1) R 1250 /W JA Junction Temperature T 150 J Storage Temperature T -55~ 150 STG Lead Temperature for Soldering Purposes(1/8 from case for 10 s) T 260 L Rev. - 1.0 www.jscj-elec.com 1MOSFET ELECTRICAL CHARACTERISTICS T =25 unless otherwise noted a Parameter Symbol Test Condition Min Type Max Unit Static Characteristics Drain-source breakdown voltage V V = 0V, I =250A 30 V (BR)DSS GS D Zero gate voltage drain current I V =30V,V = 0V 1 A DSS DS GS Gate-body leakage current I V =10V, V = 0V 20 A GSS GS DS (2) Gate threshold voltage V V =V , I =250A 0.8 1.0 1.5 V GS(th) DS GS D V =4.5V, I =600mA 320 500 GS D (2) R m Drain-source on-resistance DS(on) V =2.5V, I =300mA 410 600 GS D Forward tranconductance g V =10V, I =150mA 150 mS FS DS D (4) Dynamic characteristics Input Capacitance C 44 120 iss Output Capacitance C V =16V,V =0V,f=1MHz 1 5 20 pF oss DS GS Reverse Transfer Capacitance C 8 15 rss (4) Switching Characteristics (3) Turn-on delay time t 5.0 d(on) (3) Turn-on rise time t 8.2 r V =10V,I =500mA, DS D ns (3) V =4.5V,R =10 Turn-off delay time t GS G 23 d(off) (3) Turn-off fall time t 41 f Source-Drain Diode characteristics (3) Diode Forward voltage V I =0.15A, V = 0V 1.2 V DS S GS Notes: 1. Surface mounted on FR4 board using the minimum recommended pad size. 2. Pulse Test : Pulse Width=300s, Duty Cycle=2%. 3. Switching characteristics are independent of operating junction temperatures. 4. Guaranteed by design, not subject to producting. Rev. - 1.0 www.jscj-elec.com 2