JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors JC ( T SOT-23 MMBT2222A TRANSISTOR (NPN) 1. BASE FEATURES 2.EMITTER z Epitaxial planar die construction 3.COLLECTOR z Complementary PNP Type available(MMBT2907A) MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 75 V CBO V Collector-Emitter Voltage 40 V CEO V 6 V Emitter-Base Voltage EBO Collector Current -Continuous 600 mA I C P Collector Dissipation 300 mW C Thermal Resistance, Junction to Ambient 417 /W R JA T Junction Temperature 150 J T Storage Temperature -55~+150 stg ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Pa rameter Symbol Test conditions inM Typ Max Unit Collector-base breakdown voltage V I = 10A, I=0 75 V (BR)CBO C E * Collector-emitter breakdown voltage V I = 10mA, I=0 40 V (BR)CEO C B Emitter-base breakdown voltage V I =10A, I=0 6 V (BR)EBO E C Collector cut-off current I V =60V, I=0 0.01 A CBO CB E Collector cut-off current I V =30V,V=3V 0.01 A CEX CE BE(off) Emitter cut-off current I V = 3V, I=0 0.1 A EBO EB C * h V =10V, I = 150mA 100 300 FE(1) CE C DC current gain h V =10V, I = 0.1mA 40 FE(2) CE C * h V =10V, I = 500mA 42 FE(3) CE C I =500 mA, I = 50mA 1 * C B Collector-emitter saturation voltage V V CE(sat) I =150 mA, I =15mA 0.3 C B * I =500 mA, I = 50mA 2.0 C B Base-emitter saturation voltage V V BE(sat) I =150 mA, I =15mA 1.2 C B V =20V, I = 20mA, CE C Transition frequency f 300 MHz T f=100MHz Delay time t 10 ns d V =30V, V =-0.5V CC BE(off) I =150mA , I = 15mA C B1 Rise time t 25 ns r Storage time t 225 ns S V =30V, I =150mA CC C I =-I =15mA B1 B2 Fall time t 60 ns f *pulse test: Pulse Width 300 s, Duty Cycle 2.0%. CLASSIFICATION OF h FE(1) RANK L H RANGE 100200 200300 MARKING 1 3 www.cj-elec.comwww.cj-elec.com 1 A,Jun,2014D,Oct,2014 Typical Characteristics h I Static Characteristic FE C 0.25 500 COMMON EMITTER 1mA COMMON EMITTER V =10V T =25 CE 0.9mA a 0.20 400 0.8mA 0.7mA T =100 a 0.15 0.6mA 300 0.5mA 0.10 200 T =25 0.4mA a 0.3mA 0.05 100 0.2mA I =0.1mA B 0.00 0 02 468 10 12 0.1 1 10 100 600 COLLECTOR-EMITTER VOLTAGE V (V) COLLECTOR CURRENT I (mA) CE C V I V I CEsat C BEsat C 0.5 1.2 =10 0.4 T =25 a 0.8 0.3 T =100 a 0.2 T =100 a 0.4 0.1 T =25 a =10 0.0 0.0 1 10 100 600 1 10 100 600 COLLECTOR CURRENT I (mA) COLLECTOR CURRENT I (mA) C C I V C / C V / V C BE ob ib CB EB 100 600 COMMON EMITTER f=1MHz V =10V I =0/ I =0 CE E C T =25 C a 100 ib T =100 a 10 C 10 ob T =25 a 1 0.1 1 0.0 0.2 0.4 0.6 0.8 1.0 0.1 1 10 20 BASE-EMMITER VOLTAGE V (V) REVERSE VOLTAGE V (V) BE P T f I c a T C 400 500 COMMON EMITTER V =20V f=200MHz CE Ta=25 300 200 100 100 0 10 80 0 25 50 75 100 125 150 COLLECTOR CURRENT I (mA) C AMBIENT TEMPERATURE Ta () www.cj-elec.comwww.cj-elec.com 2 D,Oct,2014A,Jun,2014 COLLECTOR-EMITTER SATURATION TRANSTION FREQUENCY f (MHz) COLLECTOR CURRENT I (A) T VOLTAGE V (V) C COLLECTOR CURRENT I (mA) CEsat C COLLECTOR POWER DISSIPATION BASE-EMITTER SATURATION Pc (mW) VOLTAGE V (V) BEsat DC CURRENT GAIN h CAPACITANCE C (pF) FE