JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors JC (T MMBT3904 TRANSISTOR (NPN) SOT23 FEATURES z Complementary to MMBT3906 MARKING:1AM MAXIMUM RATINGS (T =25 unless otherwise noted) a Symbol Parameter Value Unit 1. BASE V Collector-Base Voltage 60 V CBO 2. EMITTER Collector-Emitter Voltage 40 V V CEO 3. COLLECTOR V Emitter-Base Voltage 6 V EBO I Collector Current 200 mA C P Collector Power Dissipation 200 mW C R Thermal Resistance From Junction To Ambient 625 /W JA Junction Temperature 150 T j T Storage Temperature -55+150 stg ELECTRICAL CHARACTERISTICS (T =25 unless otherwise specified) a Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V I =10A, I=0 60 V (BR)CBO C E Collector-emitter breakdown voltage V I =1mA, I=0 40 V (BR)CEO C B V I =10A, I=0 6 V Emitter-base breakdown voltage (BR)EBO E C I V =30V, V=3V 50 nA Collector cut-off current CE CE EB( X off) Collector cut-off current I V = 60V, I=0 100 nA CBO CB E Emitter cut-off current I V =5V, I=0 100 nA EBO EB C h V =1V, I=10mA 100 300 FE(1) CE C DC current gain h V =1V, I=50mA 60 FE(2) CE C h V =1V, I=100mA 30 FE(3) CE C Collector-emitter saturation voltage V I =50mA, I=5mA 0.3 V CE(sat) C B Base-emitter saturation voltage V I =50mA, I =5mA 0.95 V BE(sat) C B Transition frequency f V =20V,I =10mA, f=100MHz 300 MHz T CE C V =3V, V =-0.5V I =10mA, CC BE(off) C Delay time t 35 ns d I =1mA B1 V =3 = = V, V -0.5V I 10mA, CC BE(off) C Rise time t 35 ns r I =1mA B1 Storage time t V =3V, I =10mA, I = I=1mA 200 ns s CC C B1 B2 Fall time t V =3V, I =10mA, I = I =1mA 50 ns f CC C B1 B2 CLASSIFICATION OF h FE(1) HFE 100-300 RANK L H RANGE 100200 200300 www.cj-elec.comwww.cj-elec.com 1 E,May,2015A,Jun,2014Typical Characteristics h I Static Characteristic FE C 100 400 COMMON EMITTER COMMON V =1V EMITTER CE 500uA T =25 a 80 450uA T =100 a 300 400uA 350uA 60 300uA 200 T =25 250uA a 40 200uA 150uA 100 20 100uA I =50uA B 0 0 0.1 0.3 1 3 10 30 100 04 8 12 16 20 COLLECTOR CURRENT I (mA) COLLECTOR-EMITTER VOLTAGE V (V) C CE V I V I BEsat C CEsat C 1.2 600 300 T =25 a 0.8 T =100 a 100 T =100 a T =25 a 0.4 30 =10 =10 10 0.0 1 3 10 30 100 200 113 0 30100 300 COLLECTOR CURRENT I (mA) COLLECTOR CURRENT I (mA) C C I V C / C V / V C BE ob ib CB EB 9 100 COMMON EMITTER f=1MHz V =1V I =0/I =0 CE E C 30 T =25 a C ib T =100 a 10 3 3 C ob T =25 a 1 0.3 1 0.1 0.2 0.4 0.6 0.8 1.0 1.2 0.1 0.3 1 3 10 20 REVERSE VOLTAGE V (V) BASE-EMITTER VOLTAGE V (V) BE f P T I T C C a 300 250 V =20V CE T =25 a 200 200 150 100 50 100 0 113 0 30 60 0 25 50 75 100 125 150 COLLECTOR CURRENT I (mA) AMBIENT TEMPERATURE T ( ) C a www.cj-elec.comwww.cj-elec.com 2 E,May,2015A,Jun,2014 COLLECTOR CURRENT I (mA) COLLECTOR-EMITTER SATURATION TRANSITION FREQUENCY f (MHz) C COLLECTOR CURRENT I (mA) T C VOLTAGE V (mV) CEsat BASE-EMITTER SATURATION COLLECTOR POWER DISSIPATION DC CURRENT GAIN h FE CAPACITANCE C (pF) VOLTAGE V (V) P (mW) BEsat C