General Purpose Transistor MMBT3904-G (NPN) RoHS Device Features SOT-23 -Epitaxial planar die construction 0.120 (3.04) 0.110 (2.80) -As complementary type, the PNP 3 transistor MMBT3904-G is recommended 0.055 (1.40) 0.047 (1.20) 1 2 0.080 (2.04) 0.070 (1.78) Collector 0.007 (0.18) 3 0.003 (0.08) 0.044 (1.11) 0.104 (2.64) 0.035 (0.89) 0.083 (2.10) 1 Base 0.004 (0.100) 0.020 (0.50) 0.001 (0.013) 0.015 (0.37) 0.027 (0.69) 0.014 (0.35) 2 Emitter Dimensions in inches and (millimeter) Maximum Ratings (at TA=25C unless otherwise noted) Rating Symbol Value Unit Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage VEBO 6.0 Vdc Collector Current-Continuous IC 200 mAdc Thermal Characteristics Characteristics Symbol Max. Value Unit Total Device Dissipation FR5 Board (Note) PD 225 mW TA = 25C Derate above 25C 1.8 mW/C Thermal Resistance, Junction to Ambient RJA 556 C/W Junction and Storage Temperature TJ, TSTG -55 to +150 C Note: FR-5 = 1.0 x 0.75 x 0.062 in. Company reserves the right to improve product design , functions and reliability without notice. REV:E QW-BTR01 Page 1 Comchip Technology CO., LTD.General Purpose Transistor Electrical Characteristics (at TA=25C unless otherwise noted) Symbol Characteristics Conditions Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC =1mA , (Note) V(BR)CEO 40 V Collector-Base Breakdown Voltage IC =10A V(BR)CBO 60 V Emitter-Base Breakdown Voltage IE =10A V(BR)EBO 6.0 V Base Cut-off Current VCE=30V , VEB=3V IBL 50 nA VCE=30V , VEB=3V Collector Cut-off Current ICEX 50 nA ON CHARACTERISTICS (Note) VCE=1V , IC=0.1mA 40 VCE=1V , IC=1.0mA 70 DC Current Gain VCE=1V , IC=10mA hFE 100 300 VCE=1V , IC=50mA 60 VCE=1V , IC=100mA 30 IC=10mA , IB=1.0mA 0.2 Collector-Emitter Saturation Voltage VCE(sat) V (Note) IC=50mA , IB=5.0mA 0.3 IC=10mA , IB=1.0mA 0.65 0.85 Base-Emitter Saturation Voltage VBE(sat) V (Note) IC=50mA , IB=5mA 0.95 SMALLSIGNAL CHARACTERISTICS Current - Gain - Bandwidth Product VCE=20V , IC=10mA , f=100MHZ fT 300 MHZ Output Capacitance VCB=5.0V , IE=0 , f=1.0MHz pF Cobo 4.0 Input Capacitance VBE=0.5V , IC=0 , f=1.0MHz pF Cibo 8.0 Input Impedancen VCE=10V , IC=1.0mA , f=1.0kHz hie 1.0 10 k -4 Voltage Feedback Ratio VCE=10V , IC=1.0mA , f=1.0kHz hre 0.5 8.0 X10 Small - Signal Current Gain VCE=10V , IC=1.0mA , f=1.0kHz hfe 100 400 Output Admittance VCE=10V , IC=1.0mA , f=1.0kHz mhos hoe 1.0 40 Noise Figure VCE=5V , IC=100A , f=1.0kHz , RS=1.0k NF 5.0 dB SWITCHING CHARACTERISTICS Delay Time VCC=3.0V , VBE=-0.5V td 35 nS Rise Time IC=10mA , IB1=1.0mA tr 35 nS Storage Time VCC=3.0V , tS 200 nS IC=10mA , IB1=IB2=1.0mA tf Fall Time 50 nS Note: 1. Pulse Test: Pulse Width 300s, Duty Cycle 2.0%. Company reserves the right to improve product design , functions and reliability without notice. REV:E QW-BTR01 Page 2 Comchip Technology CO., LTD.