JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors JC ( T MMBT5401 TRANSISTOR (PNP) SOT23 FEATURES Complementary to MMBT5551 Ideal for Medium Power Amplification and Switching 1. BASE MARKING: 2L 2. EMITTER MAXIMUM RATINGS (T =25 unless otherwise noted) a 3. COLLECTOR Symbol Parameter Value Unit V V Collector-Base Voltage -160 CBO V V Collector-Emitter Voltage -150 CEO V V Emitter-Base Voltage -5 EBO Collector Current -0.6 A I C Collector Power Dissipation 0.3 W P C R Thermal Resistance from Junction to Ambient 416 /W JA Junction Temperature 150 T j Storage Temperature T -55+150 stg ELECTRICAL CHARACTERISTICS (T =25 unless otherwise specified) a Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V I =-100A, I=0 -160 V (BR)CBO C E * Collector-emitter breakdown voltage V I =-1mA, I=0 -150 V (BR)CEO C B Emitter-base breakdown voltage V I =-10A, I=0 -5 V (BR)EBO E C I V =-120V, I=0 -0.1 A Collector cut-off current CBO CB E Emitter cut-off current I V =-4V, I=0 -0.1 A EBO EB C * h V =-5V, I=-1mA 80 FE(1) CE C * DC current gain h V =-5V, I=-10mA 100 300 FE(2) CE C * h V =-5V, I=-50mA 50 FE(3) CE C * V I =-10mA, I=-1mA -0.2 V CE(sat)1 C B Collector-emitter saturation voltage * V I =-50mA, I=-5mA -0.5 V CE(sat)2 C B * V I =-10mA, I=-1mA -1 V BE(sat)1 C B Base-emitter saturation voltage * V I =-50mA, I=-5mA -1 V BE(sat)2 C B Transition frequency f V =-5V,I =-10mA, f=30MHz 100 MHz T CE C *Pulse test: pulse width 300 s, duty cycle 2.0%. CLASSIFICATION OF h FE (2) RANK L H RANGE 100-200 200-300 www.cj-elec.comwww.cj-elec.com 1 A,Jun,2014D,Oct,2014Typical Characteristics h I Static Characteristic FE C -20 300 V =-5V -100uA COMMON CE -18 o EMITTER T =100 C a -90uA T =25 250 a -16 -80uA -14 -70uA 200 -12 -60uA -10 150 o T =25 C a -50uA -8 -40uA 100 -6 -30uA -4 50 -20uA -2 I =-10uA B -0 0 -600 -0 -3 -6 -9 -1 -10 -100 COLLECTOR CURRENT I (mA) COLLECTOR-EMITTER VOLTAGE V (V) C CE V I V I CEsat C BEsat C -1.0 -1 =10 =10 T =25 -0.8 a T =100 a -0.6 -0.1 T =100 a -0.4 T =25 a -0.2 -0.0 -0.01 -600 -600 -0.1 -1 -10 -100 -0.1 -1 -10 -100 COLLECTOR CURRENT I (mA) COLLECTOR CURRENT I (mA) C C I V V / V C / C C BE CB EB ob ib -100 100 V =-5V CE f=1MHz I =0 / I =0 E C o T =25 C a Cib -10 o T =100 C a 10 T =25 a -1 Cob -0.1 1 -0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1 -10 -0.5 REVERSE VOLTAGE V (V) BASE-EMITTER VOLTAGE V (V) BE I f P T C T c a 300 0.4 250 0.3 200 150 0.2 100 0.1 50 VCE=-5V o T =25 C a 0 0.0 -0 -5 -10 -15 -20 -25 -30 0 25 50 75 100 125 150 COLLECTOR CURRENT I (mA) AMBIENT TEMPERATURE Ta () C www.cj-elec.comwww.cj-elec.com 2 D,Oct,2014A,Jun,2014 BASE-EMITTER SATURATION TRANSITION FREQUENCY f (MHz) T COLLECTOR CURRENT I (mA) C VOLTAGE V (V) COLLECTOR CURRENT I (mA) C BEsat COLLECTOR-EMITTER SATURATION VOLTAGE V (V) COLLECTOR POWER DISSIPATION CEsat DC CURRENT GAIN h FE P (W) CAPACITANCE C (pF) c