General Purpose Transistor MMBT5401-G (PNP) RoHS Device SOT-23 Features -Epitaxial planar die construction. 0.119(3.00) 0.110(2.80) -Complementary NPN type available (MMBT5551-G). 3 -Ideal for medium power amplification and switching. 0.056(1.40) 0.047(1.20) Diagram: 1 2 0.006(0.15) 0.079(2.00) Collector 0.002(0.05) 0.071(1.80) 3 0.041(1.05) 0.100(2.55) 0.035(0.90) 0.089(2.25) 1 Base 0.004(0.10) max 0.020(0.50) 0.008(0.20) min 0.012(0.30) 2 Emitter Dimensions in inches and (millimeter) Marking: 2L Maximum Ratings (at TA=25C unless otherwise noted) Symbol Parameter Value Unit Collector-base voltage VCBO -160 V Collector-emitter voltage VCEO -150 V Emitter-base voltage VEBO -5 V Collector current - continuous IC -0.6 A Collector dissipation PC 0.3 W O Junction and storage temperature TJ, TSTG -55 ~ +150 C Electrical Characteristics (at TA=25C unless otherwise noted) Symbol Parameter Conditions Min Max Unit Collector-base breakdown voltage IC=-100 A, IE=0 V(BR)CBO -160 V V Collector-emitter breakdown voltage IC=-1mA, IB=0 V(BR)CEO -150 V Emitter-base breakdown voltage IE=-10 A, IC=0 V(BR)EBO -5 V Collector cut-off current VCB=-120V, IE=0 ICBO -0.1 A Emitter cut-off current VEB=-4V, IC=0 IEBO -0.1 A VCE=-5V, IC=-1mA hFE(1) 80 DC current gain VCE=-5V, IC=-10mA hFE(2) 100 200 VCE=-5V, IC=-50mA hFE(3) 50 Collector-emitter saturation voltage IC=-50mA, IB=-5mA VCE(sat) -0.5 V Base-emitter saturation voltage IC=-50mA, IB=-5mA VBE(sat) -1 V Transition frequency VCE=-5V, IC=-10mA, f=30MHz fT 100 Mhz REV:B QW-BTR18 Page 1 Comchip Technology CO., LTD.General Purpose Transistor RATING AND CHARACTERISTIC CURVES (MMBT5401-G) Fig.1 Max Power Dissipation vs. Fig.2 Collector Emitter Saturation Voltage vs. Collector Current Ambient Temperature 400 10 350 300 1.0 250 O 200 Ta=150 C 150 0.1 100 O Ta=-50 C O Ta=25 C 50 0 0.01 0 25 50 75 100 125 150 175 1 10 100 1000 Ta, Ambient Temperature (C) IC, Collector Current (mA) Fig.3 DC Current Gain vs. Collector Current Fig.4 Base Emitter Voltage vs. Collector Current 10000 1.0 VCE=5V VCE=5V O Ta=-50 C 1000 O Ta=150 C O Ta=25 C 100 0.5 O Ta=25 C O Ta=-50 C O Ta=150 C 10 1 0.1 1 10 100 1000 0.1 1.0 10 100 IC, Collector Current (mA) IC, Collector Current (mA) Fig.5 Gain Bandwidth Product vs. Collector Current 1000 VCE=10V 100 10 1 1 10 100 IC, Collector Current (mA) REV:B QW-BTR18 Page 2 Comchip Technology CO., LTD. fT, Gain Bandwidth Product (Mhz) hFE, DC Current Gain (Normalized) PD, Power Dissipation (mW) VBE(ON), Base Emitter Voltage (V) VCE(sat), Collector to Emitter Saturation Voltage (V)