JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors JC ( T MMBTA94 TRANSISTOR (PNP) SOT 23 FEATURES High Breakdown Voltage MARKING:4D MAXIMUM RATINGS (T =25 unless otherwise noted) a 1. BASE Symbol Parameter Value Unit 2. EMITTER V Collector-Base Voltage -400 V CBO 3. COLLECTOR V Collector-Emitter Voltage -400 V CEO V Emitter-Base Voltage -5 V EBO I Collector Current -Continuous -200 mA C Collector Current -Pulsed -300 mA I CM Collector Power Dissipation 350 mW P C Thermal Resistance From Junction To Ambient R 357 /W JA T Junction Temperature 150 j T Storage Temperature -55+150 stg ELECTRICAL CHARACTERISTICS (T =25 unless otherwise specified) a Parameter Symbol Test conditions Min Typ Max Unit V I =-100A, I =0 -400 V Collector-base breakdown voltage (BR)CBO C E V I =-1mA, I =0 -400 V Collector-emitter breakdown voltage (BR)CEO C B V I =-100A, I =0 -5 V Emitter-base breakdown voltage (BR)EBO E C Collector cut-off current I V =-400V, I =0 -0.1 A CBO CB E Collector cut-off current I V =-400V, I =0 -5 A CEO CE B Emitter cut-off current I V =-4V, I =0 -0.1 A EBO EB C h V =-10V, I =-10mA 80 300 FE(1) CE C h V =-10V, I =-1mA 70 FE(2) CE C DC current gain h V =-10V, I =-100mA 40 FE(3) CE C h V =-10V, I =-50mA 40 FE(4) CE C V I =-10mA, I =-1mA -0.2 V CE(sat)1 C B Collector-emitter saturation voltage V I =-50mA, I =-5mA -0.3 V CE(sat)2 C B Base-emitter saturation voltage VBE(sat) IC=-10mA, IB=-1mA -0.75 V V =-20V,I =-10mA, CE C f 50 MHz Transition frequency T f=30MHz www.cj-elec.comwww.cj-elec.com 1 D,Oct,2014A,Jun,2014Typical Characteristics h I Static Characteristic FE C -20 -1000 V = -10V COMMON CE EMITTER T =25 a -100uA o T =100 C -15 a -90uA -80uA -70uA -10 -100 -60uA o T =25 C -50uA a -40uA -5 -30uA -20uA I =-10uA B -0 -10 -0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 -1 -10 -100 -200 COLLECTOR CURRENT I (mA) C COLLECTOR-EMITTER VOLTAGE V (V) CE V I V I CEsat C BEsat C -1000 -10 =10 =10 -800 -1 T =25 a T =100 -600 a -0.1 -400 T =25 a T =100 a -0.01 -200 -0 -1E-3 -0.1 -1 -10 -100 -200 -1 -10 -100 -200 COLLECTOR CURRENT I (mA) COLLECTOR CURRENT I (mA) C C C / C f V / V I ob ib T CB EB C 60 1000 V =-20V f=1MHz CE o I =0 / I =0 55 T =25 C E C a o T =25 C a 50 100 45 C ib 40 35 10 C ob 30 25 20 1 -0 -10 -20 -30 -40 -50 -60 -0.1 -1 -10 -20 REVERSE VOLTAGE V (V) COLLECTOR CURRENT I (mA) C P T c a 400 350 300 250 200 150 100 50 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE T ( ) a www.cj-elec.comwww.cj-elec.com 2 A,Jun,2014D,Oct,2014 COLLECTOR POWER DISSIPATION BASE-EMITTER SATURATION COLLECTOR CURRENT I (mA) C P (mW) TRANSITION FREQUENCY f (MHz) T c VOLTAGE V (mV) BEsat COLLECTOR-EMITTER SATURATION VOLTAGE V (V) CEsat DC CURRENT GAIN h CAPACITANCE C (pF) FE