JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-223 Plastic-Encapsulate Transistors PZTA42 TRANSISTOR (NPN) SOT-223 FEATURES High breakdown voltage 1. BASE Low collector-emitter saturation voltage 2. COLLECTOR Complementary type: PZTA92(PNP) 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit MARKING: V Collector-Base Voltage 300 V CBO V Collector-Emitter Voltage 300 V CEO V Emitter-Base Voltage 6 V EBO I Collector Current -Continuous 0.2 A C I Collector Current -Pulsed 0.5 A CM P Collector Power Dissipation 1 W C T Junction Temperature 150 j Solid dot = Green molding compound device, T Storage Temperature -55~150 stg if none,the normal device. ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V I =100A,I=0 300 V (BR)CBO C E Collector-emitter breakdown voltage V I =1mA,I=0 300 V (BR)CEO C B Emitter-base breakdown voltage V I =100A,I=0 6 V (BR)EBO E C Collector cut-off current I V =200V,I=0 0.1 A CBO CB E Emitter cut-off current I V =6V,I=0 0.1 A EBO EB C h V =10V,I=1mA 25 FE(1) CE C DC current gain h V =10V,I=10mA 40 FE(2) CE C h V =10V,I=30mA 40 FE(3) CE C V I =20mA,I=2mA 0.5 V Collector-emitter saturation voltage CE(sat) C B Base-emitter saturation voltage V I =20mA,I=2mA 0.9 V BE(sat) C B Transition frequency f V =20V,I=10mA,f=100MHz 50 MHz T CE C Collector output capacitance C V =20V,I=0,f=1MHz 3 pF ob CB E www.cj-elec.com 1 E,Jan,2017 Typical Characteristics I V h I C CE FE C 18 1000 90uA COMMON EMITTER 16 80uA T =25 a 14 70uA T =100 a 12 60uA T =25 50uA 10 a 100 40uA 8 30uA 6 20uA 4 I =10uA B 2 COMMON EMITTER V =10V CE 0 10 02468 10 12 14 16 18 20 22 0.1 1 10 100 COLLECTOR-EMITTER VOLTAGE V (V) COLLECTOR CURRENT I (mA) CE C V V I I CEsat BEsat C C 900 500 T =25 a 600 T =100 a 100 T =25 a T =100 a =10 =10 10 300 0.1 1 10 100 0.1 1 10 100 COLLECTOR CURREMT I (mA) COLLECTOR CURREMT I (mA) C C I V f I C BE T C 100 300 100 10 1 COMMON EMITTER V =20V COMMON EMITTER CE V =10V T =25 CE a 0.1 10 0 300 600 900 1200 0.1 1 10 100 COLLECTOR CURRENT I (mA) BASE-EMMITER VOLTAGE V (mV) BE C C /C V /V P T ob ib CB EB C a 100 1200 f=1MHz I =0/I =0 E C 1000 T =25 C a ib 800 10 600 400 C ob 200 1 0 0.1 1 10 20 0 25 50 75 100 125 150 REVERSE VOLTAGE V (V) AMBIENT TEMPERATURE T ( ) a www.cj-elec.com 2 D,May,2015 T =100 a T =25 a COLLECTOR-EMITTER SATURATION COLLECTOR CURRENT I (mA) C VOLTAGE V (mV) COLLECTOR CURRENT I (mA) CAPACITANCE C (pF) CEsat C BASE-EMITTER SATURATION COLLECTOR POWER DISSIPATION DC CURRENT GAIN h TRANSITION FREQUENCY f (MHz) VOLTAGE V (mV) FE P (mW) T C BEsat