X-On Electronics has gained recognition as a prominent supplier of MMBT5401 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MMBT5401 Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

MMBT5401 Diodes Incorporated

Name: MMBT5401
Brand: Diodes Incorporated
SKU: MMBT5401_Diodes Incorporated
Availability: OutOfStock
Rating: 5 (11 reviews)

MMBT5401 electronic component of Diodes Incorporated

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Part No.	MMBT5401
Manufacturer:	Diodes Incorporated
Category:	Bipolar Transistors - BJT
Description:	TRANSISTOR, PNP, 150V, 0.6A, SOT23
Datasheet:	MMBT5401 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

5: USD 0.2313 ea
Line Total: USD 1.16

Availability - 0

MOQ: 5 Multiples: 1
Pack Size: 1

MMBT5401 More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Wed. 24 Jul to Tue. 30 Jul MOQ : 100 Multiples : 1	100 : USD 0.0608 500 : USD 0.0461 1000 : USD 0.0372 5000 : USD 0.0328

Specifications

Manufacturer Diodes Incorporated Diodes Incorporated
Product Category Bipolar Transistors - BJT Bipolar Transistors - BJT
Transistor Polarity PNP PNP
Brand Diodes Incorporated Diodes Incorporated
Collector Emitter Voltage Vbrceo - 150 V - 150 V
Transition Frequency Ft 300Mhz 300Mhz
Power Dissipation Pd 300 mW 300 mW
Dc Collector Current - 600 mA - 600 mA
Dc Current Gain Hfe 60hFE 60hFE
Transistor Case Style SOT - 23 SOT - 23
No. Of Pins 3Pins 3Pins
Operating Temperature Max 150 C 150 C
Msl MSL 1 - Unlimited MSL 1 - Unlimited
Svhc No SVHC (27 - Jun - 2018) No SVHC (27 - Jun - 2018)
Operating Temperature Min - 55 C - 55 C
Operating Temperature Range - 55 C To + 150 C - 55 C To + 150 C

MMBT5401 Alternative Parts

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We are delighted to provide the MMBT5401 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MMBT5401 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

MMBT5401 150V PNP SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data Epitaxial Planar Die Construction Case: SOT23 Complementary NPN Type - MMBT5551 Case material: molded plastic, Green molding compound Ideal for Low Power Amplification and Switching UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Moisture Sensitivity: Level 1 per J-STD-020 Halogen and Antimony Free.Gree Device (Note 3) Terminals: Finish Matte Tin Plated Leads, Solderable per Qualified to AEC-Q101 Standards for High Reliability MIL-STD-202, Method 208 PPAP capable (Note 4) Weight: 0.008 grams (Approximate) C SOT23 B E Device Symbol Top View Top View Pin-Out Ordering Information (Notes 4 & 5) Product Compliance Marking Reel size (inches) Tape width (mm) Quantity per reel MMBT5401-7-F AEC-Q101 K4M 7 8 3,000 MMBT5401-13-F AEC-Q101 K4M 13 8 10,000 MMBT5401Q-7-F Automotive K4M 7 8 3,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See MMBT5401 Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage V -160 V CBO Collector-Emitter Voltage V -150 V CEO Emitter-Base Voltage V -5.0 V EBO Collector Current I -600 mA C Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit (Note 6) 310 Power Dissipation P mW D (Note 7) 350 (Note 6) 403 Thermal Resistance, Junction to Ambient R C/W JA (Note 7) 357 Thermal Resistance, Junction to Leads (Note 8) R 350 C/W JL Operating and Storage Temperature Range T T -55 to +150 C J, STG ESD Ratings (Note 9) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge - Machine Model ESD MM 400 V C Notes: 6. For a device mounted on minimum recommended pad layout 1oz copper that is on a single-sided FR4 PCB device is measured under still air conditions whilst operating in a steady-state. 7. Same as note (6), except the device is mounted on 15 mm x 15mm 1oz copper. 8. Thermal resistance from junction to solder-point (at the end of the leads). 9. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 2 of 7 December 2013 MMBT5401 Diodes Incorporated www.diodes.com Document number: DS30057 Rev. 10 - 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

DIO may also be referenced as

Diodes
DIODES INC
DIODES INC / ZETEX
DIODES INC.
Diodes Inc. / Pericom
Diodes Zetex
DiodesZetex
PAM(Diodes Inc)
PER
Pericom
PERICOM SEMI
Pericom Semiconductor
Pericom Technology
Pericom/Diodes
ZTX

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