X-On Electronics has gained recognition as a prominent supplier of MMBT5401 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MMBT5401 Bipolar Transistors - BJT are a product manufactured by LGE. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

MMBT5401 LGE

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Part No.	MMBT5401
Manufacturer:	LGE
Category:	Bipolar Transistors - BJT
Description:	Transistors (NPN/PNP) SOT-23 RoHS
Datasheet:	MMBT5401 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

20: USD 0.0191 ea
Line Total: USD 0.38

Availability - 135
Ship by Thu. 13 Mar to Tue. 18 Mar

MOQ: 20 Multiples: 20
Pack Size: 20

MMBT5401 More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

135

Ship by Thu. 13 Mar to Tue. 18 Mar

MOQ : 20
Multiples : 20

20 : USD 0.0191
200 : USD 0.0189
600 : USD 0.0185
3000 : USD 0.0126

Specifications

Manufacturer

LGE LGE

Product Category

Bipolar Transistors - BJT Bipolar Transistors - BJT

Category

Bipolar Transistors-BJT Bipolar Transistors-BJT

Rohs

y y

Package

SOT - 23 SOT - 23

Brand Category

Lge Lge

Collector Cut-Off Current Icbo

50 nA 50 nA

Collector-Emitter Breakdown Voltage Vceo

150 V 150 V

Power Dissipation Pd

350 mW 350 mW

Collector Current Ic

600 mA 600 mA

Dc Current Gain Hfe@Ic Vce

100@10 mA , 5V 100@10 mA , 5V

Transition Frequency Ft

100MHz 100MHz

Collector-Emitter Saturation Voltage Vcesat@Ic Ib

500 mV @50 mA , 5 mA 500 mV @50 mA , 5 mA

Transistor Type

PNP PNP

Operating Temperature

- 55 C ~ + 150 C @ (Tj) - 55 C ~ + 150 C @ (Tj)

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Additional Infomation About Product

The MMBT5401 with Transistors (NPN/PNP) SOT-23 RoHS manufactured by LGE is a dual NPN/PNP transistor in SOT-23 surface mount package. It has a Vceo (Collector-Emitter Voltage) of 60V and a hFE (DC Current Gain) range of 120 to 420. It has low noise gain bandwidth product and an integrated ESD protection circuit. The device features low collector-emitter saturation voltage and fast switching speeds making it ideal for use in automotive, consumer, industrial, audio, and other applications. It is RoHS compliant and manufactured in accordance with National Semiconductor JEDEC specifications.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Availability	Price	Buy Price	Quantity
135 Ship by Thu. 13 Mar to Tue. 18 Mar MOQ : 20 Multiples : 20	20 : USD 0.0191 200 : USD 0.0189 600 : USD 0.0185 3000 : USD 0.0126

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Image	Part-Description
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Image	Part-Description
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Hot	MMBT4126LT1G Bipolar (BJT) Transistor PNP 25 V 200 mA 250MHz 225 mW Surface Mount SOT-23-3 (TO-236) Stock : 49374 Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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