X-On Electronics has gained recognition as a prominent supplier of MMBT5401 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MMBT5401 Bipolar Transistors - BJT are a product manufactured by Microdiode Electronics. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

MMBT5401 Microdiode Electronics

Name: MMBT5401
Brand: Microdiode Electronics
SKU: MMBT5401_Microdiode Electronics
Availability: InStock
Rating: 5 (11 reviews)

MMBT5401 electronic component of Microdiode Electronics

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See Product Specifications

Part No.	MMBT5401
Manufacturer:	Microdiode Electronics
Category:	Bipolar Transistors - BJT
Description:	Transistors (NPN/PNP) SOT-23-3 RoHS
Datasheet:	MMBT5401 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

50: USD 0.0132 ea
Line Total: USD 0.66

Availability - 33148
Ship by Thu. 05 Dec to Tue. 10 Dec

MOQ: 50 Multiples: 50
Pack Size: 50

MMBT5401 More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

33148

Ship by Thu. 05 Dec to Tue. 10 Dec

MOQ : 50
Multiples : 50

50 : USD 0.0132
500 : USD 0.0105
3000 : USD 0.0089
6000 : USD 0.0079
24000 : USD 0.0072
51000 : USD 0.0067

Specifications

Manufacturer
Microdiode Electronics Microdiode Electronics

Product Category
Bipolar Transistors - BJT Bipolar Transistors - BJT

Brand
Microdiode Electronics Microdiode Electronics

Rohs
Y Y

Package
SOT - 23 - 3 SOT - 23 - 3

Transistor Type
PNP PNP

Current - Collector Ic Max
600 mA 600 mA

Voltage - Collector Emitter Breakdown Max
160 V 160 V

Power - Max
300 mW 300 mW

Collector Cut-Off Current Icbo
100 nA 100 nA

Collector-Emitter Breakdown Voltage Vceo
150 V 150 V

Power Dissipation Pd
300 mW 300 mW

Collector Current Ic
600 mA 600 mA

Dc Current Gain Hfe@Ic Vce
100@10 mA , 5V 100@10 mA , 5V

Transition Frequency Ft
100MHz 100MHz

Collector-Emitter Saturation Voltage Vcesat@Ic Ib
1 V @50 mA , 5 mA 1 V @50 mA , 5 mA

Operating Temperature
+ 150 C @ (Tj) + 150 C @ (Tj)

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We are delighted to provide the MMBT5401 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MMBT5401 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

The MMBT5401 is a Transistor manufactured by Microdiode Electronics in a SOT-23-3 RoHS package. It is an NPN/PNP device and is commonly used in many analog circuit applications such as audio amplifiers, motor control circuits, current source drivers, and control systems. Features include low collector cutoff current, high switching speed, and enhanced ESD performance. This part is RoHS compliant and is suitable for industrial applications.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

(MDD) Jiangsu Yutai Elec may also be referenced as

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MDDï¼ˆMicrodiode Electronicsï¼‰
Micro diode Electronics
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Availability	Price	Buy Price	Quantity
33148 Ship by Thu. 05 Dec to Tue. 10 Dec MOQ : 50 Multiples : 50	50 : USD 0.0132 500 : USD 0.0105 3000 : USD 0.0089 6000 : USD 0.0079 24000 : USD 0.0072 51000 : USD 0.0067

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Image	Part-Description
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