X-On Electronics has gained recognition as a prominent supplier of MMBT5401 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MMBT5401 Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

MMBT5401 ON Semiconductor

MMBT5401 electronic component of ON Semiconductor
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See Product Specifications
Part No.MMBT5401
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Transistor: PNP; bipolar; 150V; 0.6A; 350mW; SOT23
Datasheet: MMBT5401 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 3000
Multiples : 3000
3000 : USD 0.0562
6000 : USD 0.0489
15000 : USD 0.0416
30000 : USD 0.0392
75000 : USD 0.0367
150000 : USD 0.0326
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 0.2947
10 : USD 0.24
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Obsolete
0
MOQ : 3000
Multiples : 3000
3000 : USD 0.0245
27000 : USD 0.0224
N/A

Obsolete
0
MOQ : 10684
Multiples : 10684
10684 : USD 0.0394
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 0.2193
10 : USD 0.141
100 : USD 0.059
1000 : USD 0.0422
3000 : USD 0.0349
9000 : USD 0.0313
24000 : USD 0.0313
45000 : USD 0.0301
99000 : USD 0.0277
N/A

Obsolete
0
MOQ : 25
Multiples : 1
25 : USD 0.0367
100 : USD 0.0321
250 : USD 0.028
549 : USD 0.0238
1509 : USD 0.0228
N/A

Obsolete
0
MOQ : 1389
Multiples : 1
1389 : USD 0.0346
N/A

Obsolete
   
Manufacturer
Product Category
Mounting
Kind Of Package
Case
Polarisation
Type Of Transistor
Collector-Emitter Voltage
Collector Current
Frequency
Power Dissipation
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ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. MMBT5401 PNP Epitaxial Silicon Transistor MMBT5401 PNP Epitaxial Silicon Transistor Features PNP General-Purpose Amplifier C This device is designed as a general-purpose amplifier and switch for applications requiring high voltage. E B SOT-23 Ordering Information Part Number Marking Package Packing Method MMBT5401 2L SOT-23 3L Tape and Reel, 3000 pcs, 7 inch Reel MMBT5401 -D87Z 2L SOT-23 3L Tape and Reel, 10000 pcs, 13 inch Reel (1),(2) Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at T = 25C unless otherwise noted. A Symbol Parameter Value Unit V Collector-Emitter Voltage -150 V CEO V Collector-Base Voltage -160 V CBO V Emitter-Base Voltage -5.0 V EBO I Collector Current - Continuous -600 mA C T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Notes: 1. These ratings are based on a maximum junction temperature of 150C. 2. These are steady-state limits. ON Semiconductor should be consulted on applications involving pulsed or low- duty-cycle operations. 2004 Semiconductor Components Industries, LLC. Publication Order Number: MMBT5401/D September-2017, Rev. 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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