X-On Electronics has gained recognition as a prominent supplier of BC857B Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BC857B Bipolar Transistors - BJT are a product manufactured by Diotec. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

BC857B Diotec

BC857B electronic component of Diotec
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See Product Specifications
Part No.BC857B
Manufacturer: Diotec
Category: Bipolar Transistors - BJT
Description: Transistor: PNP; bipolar; 45V; 100mA; 250mW; SOT23
Datasheet: BC857B Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.0978 ea
Line Total: USD 0.1

Availability - 24666
Ship by Mon. 29 Jul to Wed. 31 Jul
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
24666
Ship by Mon. 29 Jul to Wed. 31 Jul
MOQ : 1
Multiples : 1
1 : USD 0.0978
10 : USD 0.0552
100 : USD 0.046
500 : USD 0.0368
1000 : USD 0.0322
3000 : USD 0.0184
9000 : USD 0.0161
45000 : USD 0.0103

89943
Ship by Tue. 23 Jul to Mon. 29 Jul
MOQ : 25
Multiples : 25
25 : USD 0.0403
100 : USD 0.0169
500 : USD 0.0156
1425 : USD 0.0117
3950 : USD 0.0117

   
Manufacturer
Product Category
Case
Kind Of Package
Mounting
Polarisation
Type Of Transistor
Collector-Emitter Voltage
Collector Current
Current Gain
Power Dissipation
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We are delighted to provide the BC857B from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BC857B and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BC856A/B, BC857A/B/C, BC858A/B/C 200mW, PNP Small Signal Transistor Small Signal Product SOT-23 Features Epitaxial planar die construction Surface device type mounting Moisture sensitivity level 1 Matte Tin(Sn) lead finish with Nickel(Ni) underplate Pb free version and RoHS compliant Green compound (Halogen free) with suffix on packing code and prefix on date code Mechanical Data Case : SOT- 23 small outline plastic package Terminal : Matte tin plated, lead free, solderable per MIL-STD-202, method 208 guaranteed High temperature soldering guaranteed : 260C/10s Weight : 0.008 grams (approximately) Maximum Ratings and Electrical Characteristics Rating at 25C ambient temperature unless otherwise specified. Maximum Ratings Symbol Value Units Parameter Power Dissipation P 200 mW D BC856 -80 Collector-Base Voltage V -50 V BC857 CBO BC858 -30 -65 BC856 V Collector-Emitter Voltage -45 V BC857 CEO BC858 -30 Emitter-Base Voltage V -5 V EBO Collector Current I -0.1 A C Junction and Storage Temperature Range T , T -55 to + 150 C J STG Notes : 1. Valid provided that electrodes are kept at ambient temperature Version : F14Small Signal Product o Electrical Characteristics ( T = 25 C unless otherwise noted ) A Symbol Min Max Units Parameter BC856 -80 BC857 I = -10 AI = 0 V - V Collector-Base Breakdown Voltage -50 C E (BR)CBO BC858 -30 BC856 -65 BC857 I = -10mA I = 0 V - V Collector-Emitter Breakdown Voltage -45 C B (BR)CEO BC858 -30 I = -1 AI = 0 V Emitter-Base Breakdown Voltage -5 - V E C (BR)EBO BC856 V = -70V - -100 CB I = 0 I Collector Cut-off Current BC857 V = -45V - -100 nA E CBO CB BC858 V = -25V - -100 CB V = -5V I =0 I Emitter Cut-off Current --0.1 A EB C EBO BC856A, BC857A, BC858A 125 250 BC856B, BC857B, BC858B V = -5V I = -2mA h DC Current Gain 220 475 CE C FE BC857C, BC858C 420 800 Collector-Emitter Saturation Voltage I = -100mA I = -5mA V - -0.65 V C B CE(sat) I = -100mA I = -5mA V Base-Emitter Saturation Voltage --1.1 V C B BE(sat) Transition Frequency V = -5V I = -10mA f= 100MHz f 100 - MHz CE C T Version : F14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Diotec Electronics
DIOTEC SEMICONDUCTOR
DIOTEC SEMICONDUCTOR AG

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